NGB8207AB datasheet, аналоги, основные параметры

Наименование: NGB8207AB  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 165 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 365 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 15 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃

tr ⓘ - Время нарастания типовое: 2320 nS

Coesⓘ - Выходная емкость, типовая: 90 pF

Тип корпуса: TO263

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 Аналог (замена) для NGB8207AB

- подбор ⓘ IGBT транзистора по параметрам

 

NGB8207AB даташит

 ..1. Size:124K  onsemi
 ngb8207ab.pdf pdf_icon

NGB8207AB

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 0.1. Size:124K  1
 ngb8207an ngb8207abn.pdf pdf_icon

NGB8207AB

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 7.1. Size:130K  1
 ngb8207n ngb8207bn.pdf pdf_icon

NGB8207AB

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 7.2. Size:130K  onsemi
 ngb8207b.pdf pdf_icon

NGB8207AB

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... F3L30R06W1E3_B11, WGW15G120N, WGW15G120W, IRG4MC50U, MMIX4B20N300, AOB10B60D, AOK10B60D, AOT10B60D, IRG7IC28U, NGB8207B, AOB15B60D, IRGSL8B60K, AOK15B60D, APT20GT60BRDQ1G, APT20GT60BRG, APT20GT60KRG, RJH1CF5RDPQ-80