Справочник IGBT. NGB8207AB

 

NGB8207AB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGB8207AB

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 165

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 365

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 15

Максимальный постоянный ток коллектора |Ic| @25℃, A: 20

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.75

Максимальная температура перехода (Tj), ℃: 175

Время нарастания типовое (tr), nS: 1800

Емкость коллектора типовая (Cc), pf: 90

Тип корпуса: TO263

Аналог (замена) для NGB8207AB

 

 

NGB8207AB Datasheet (PDF)

 ..1. Size:124K  onsemi
ngb8207ab.pdf

NGB8207AB
NGB8207AB

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 0.1. Size:124K  1
ngb8207an ngb8207abn.pdf

NGB8207AB
NGB8207AB

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 7.1. Size:130K  1
ngb8207n ngb8207bn.pdf

NGB8207AB
NGB8207AB

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 7.2. Size:130K  onsemi
ngb8207b.pdf

NGB8207AB
NGB8207AB

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

Другие IGBT... F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , IKW50N60T , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 .

 

 
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