NGB8207B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGB8207B
Tipo de transistor: IGBT
Polaridad de transistor: N-Channel
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 165
Tensión máxima colector-emisor |Vce|, V: 365
Tensión máxima puerta-emisor |Vge|, V: 15
Colector de Corriente Continua a 25℃ |Ic|, A: 20
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 2320
Capacitancia de salida (Cc), typ, pF: 90
Paquete / Cubierta: TO263
Búsqueda de reemplazo de NGB8207B - IGBT
NGB8207B Datasheet (PDF)
ngb8207b.pdf
NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
ngb8207ab.pdf
NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
ngb8206a.pdf
NGB8206N, NGB8206ANIgnition IGBT20 A, 350 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
ngb8202a.pdf
NGB8202N, NGB8202ANIgnition IGBT20 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
ngb8204a.pdf
NGB8204N, NGB8204ANIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featureshttp://onsemi.commonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses18 AMPS, 400 VOLTSinclude Ignition, Direct Fuel Injection, or wherever high voltage andVCE(on) 3 2
Otros transistores... WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , RJP6065DPM , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JNG8T60FT1 | JNG80T60LS | JNG75T65HYU2 | JNG75T65HXU1 | JNG75T120QZU1 | JNG75T120QS1 | JNG75T120LS | JNG60T60HS | JNG5T65DS1 | JNG50N120QS1 | JNG50N120QFU1