NGB8207B Todos los transistores

 

NGB8207B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8207B

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 165

Tensión colector-emisor (Vce): 365

Voltaje de saturación colector-emisor (Vce sat): 2.1

Tensión emisor-compuerta (Veg): 15

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 2320

Capacitancia de salida (Cc), pF: 90

Empaquetado / Estuche: TO263

Búsqueda de reemplazo de NGB8207B - IGBT

 

NGB8207B Datasheet (PDF)

..1. ngb8207b.pdf Size:130K _onsemi

NGB8207B
NGB8207B

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

7.1. ngb8207ab.pdf Size:124K _onsemi

NGB8207B
NGB8207B

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

8.1. ngb8206a.pdf Size:123K _onsemi

NGB8207B
NGB8207B

NGB8206N, NGB8206ANIgnition IGBT20 A, 350 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

8.2. ngb8202a.pdf Size:123K _onsemi

NGB8207B
NGB8207B

NGB8202N, NGB8202ANIgnition IGBT20 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 8.3. ngb8204a.pdf Size:126K _onsemi

NGB8207B
NGB8207B

NGB8204N, NGB8204ANIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featureshttp://onsemi.commonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses18 AMPS, 400 VOLTSinclude Ignition, Direct Fuel Injection, or wherever high voltage andVCE(on) 3 2

Otros transistores... WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , RJH60F5DPQ-A0 , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G .

 

 
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