NGB8207B Todos los transistores

 

NGB8207B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8207B

Tipo de transistor: IGBT

Polaridad de transistor: N-Channel

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 165

Tensión máxima colector-emisor |Vce|, V: 365

Tensión máxima puerta-emisor |Vge|, V: 15

Colector de Corriente Continua a 25℃ |Ic|, A: 20

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.1

Temperatura máxima de unión (Tj), ℃: 175

Tiempo de subida (tr), typ, nS: 2320

Capacitancia de salida (Cc), typ, pF: 90

Paquete / Cubierta: TO263

Búsqueda de reemplazo de NGB8207B - IGBT

 

NGB8207B Datasheet (PDF)

 ..1. Size:130K  onsemi
ngb8207b.pdf

NGB8207B
NGB8207B

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 0.1. Size:130K  1
ngb8207n ngb8207bn.pdf

NGB8207B
NGB8207B

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 7.1. Size:124K  1
ngb8207an ngb8207abn.pdf

NGB8207B
NGB8207B

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 7.2. Size:124K  onsemi
ngb8207ab.pdf

NGB8207B
NGB8207B

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top

 


NGB8207B
  NGB8207B
  NGB8207B
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: SL40T65FL1 | SL25T120FL | SL20T65F1 | SL20T65K1 | SL20T65FL1 | SL20T65FL | SL20T65FZ | SL20T65 | SL20T65F | SL15T65FK | SL15T65F

 

 

 
Back to Top