NGB8207B IGBT. Datasheet pdf. Equivalent
Type Designator: NGB8207B
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 165
Maximum Collector-Emitter Voltage |Vce|, V: 365
Maximum Gate-Emitter Voltage |Vge|, V: 15
Maximum Collector Current |Ic| @25℃, A: 20
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.1
Maximum G-E Threshold Voltag |VGE(th)|, V: 2
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 2320
Collector Capacity (Cc), typ, pF: 90
Package: TO263
NGB8207B Transistor Equivalent Substitute - IGBT Cross-Reference Search
NGB8207B Datasheet (PDF)
ngb8207b.pdf
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NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
ngb8207n ngb8207bn.pdf
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NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
ngb8207an ngb8207abn.pdf
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NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
ngb8207ab.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
Datasheet: WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , MBQ40T65FDSC , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G .
![NGB8207B](https://alltransistors.com/images/us.png)
![NGB8207B](https://alltransistors.com/images/es.png)
![NGB8207B](https://alltransistors.com/images/ru.png)
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ