All IGBT. NGB8207B Datasheet

 

NGB8207B IGBT. Datasheet pdf. Equivalent


   Type Designator: NGB8207B
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 165 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 365 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 2 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 2320 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO263

 NGB8207B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGB8207B Datasheet (PDF)

 ..1. Size:130K  onsemi
ngb8207b.pdf

NGB8207B
NGB8207B

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 0.1. Size:130K  1
ngb8207n ngb8207bn.pdf

NGB8207B
NGB8207B

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 7.1. Size:124K  1
ngb8207an ngb8207abn.pdf

NGB8207B
NGB8207B

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 7.2. Size:124K  onsemi
ngb8207ab.pdf

NGB8207B
NGB8207B

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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