NGB8207B IGBT. Datasheet pdf. Equivalent

Type Designator: NGB8207B

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 165

Maximum Collector-Emitter Voltage |Vce|, V: 365

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 15

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 2320

Maximum Collector Capacity (Cc), pF: 90

Package: TO263

NGB8207B Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGB8207B IGBT. Datasheet pdf. Equivalent

Type Designator: NGB8207B

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 165

Maximum Collector-Emitter Voltage |Vce|, V: 365

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 15

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 2320

Maximum Collector Capacity (Cc), pF: 90

Package: TO263

NGB8207B Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGB8207B Datasheet (PDF)

0.1. ngb8207b.pdf Size:130K _onsemi

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

7.1. ngb8207ab.pdf Size:124K _onsemi

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 8.1. ngb8206a.pdf Size:123K _onsemi

NGB8206N, NGB8206ANIgnition IGBT20 A, 350 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

8.2. ngb8202a.pdf Size:123K _onsemi

NGB8202N, NGB8202ANIgnition IGBT20 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 8.3. ngb8204a.pdf Size:126K _onsemi

NGB8204N, NGB8204ANIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featureshttp://onsemi.commonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses18 AMPS, 400 VOLTSinclude Ignition, Direct Fuel Injection, or wherever high voltage andVCE(on) 3 2

Datasheet: WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , G30N60C3D , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G .

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IGBT: MMGTU75J120U | MMGT75WD120XB6C | MMGT75W120XB6C | MMGT75W120X6C | MMGT75H120X6C | MMGT50W120XB6C | MMGT50W120X6C | MMGT50H120X6C | MMGT40H120XB6C | MMGT25H120XB6C | MMGT200Q120B6C