All IGBT. NGB8207B Datasheet

 

NGB8207B IGBT. Datasheet pdf. Equivalent

Type Designator: NGB8207B

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 165

Maximum Collector-Emitter Voltage |Vce|, V: 365

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 15

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 2320

Maximum Collector Capacity (Cc), pF: 90

Package: TO263

NGB8207B Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGB8207B IGBT. Datasheet pdf. Equivalent

Type Designator: NGB8207B

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 165

Maximum Collector-Emitter Voltage |Vce|, V: 365

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 15

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 2320

Maximum Collector Capacity (Cc), pF: 90

Package: TO263

NGB8207B Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGB8207B Datasheet (PDF)

0.1. ngb8207b.pdf Size:130K _onsemi

NGB8207B NGB8207B

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

7.1. ngb8207ab.pdf Size:124K _onsemi

NGB8207B NGB8207B

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 8.1. ngb8206a.pdf Size:123K _onsemi

NGB8207B NGB8207B

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

8.2. ngb8202a.pdf Size:123K _onsemi

NGB8207B NGB8207B

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 8.3. ngb8204a.pdf Size:126K _onsemi

NGB8207B NGB8207B

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http://onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top