NGB8207B IGBT. Datasheet pdf. Equivalent
Type Designator: NGB8207B
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 165
Maximum Collector-Emitter Voltage |Vce|, V: 365
Collector-Emitter saturation Voltage |Vcesat|, V: 2.1
Maximum Gate-Emitter Voltage |Veg|, V: 15
Maximum Collector Current |Ic|, A: 20
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 2320
Maximum Collector Capacity (Cc), pF: 90
Package: TO263
NGB8207B Transistor Equivalent Substitute - IGBT Cross-Reference Search
NGB8207B IGBT. Datasheet pdf. Equivalent
Type Designator: NGB8207B
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 165
Maximum Collector-Emitter Voltage |Vce|, V: 365
Collector-Emitter saturation Voltage |Vcesat|, V: 2.1
Maximum Gate-Emitter Voltage |Veg|, V: 15
Maximum Collector Current |Ic|, A: 20
Maximum Junction Temperature (Tj), °C: 175
Rise Time, nS: 2320
Maximum Collector Capacity (Cc), pF: 90
Package: TO263
NGB8207B Transistor Equivalent Substitute - IGBT Cross-Reference Search
NGB8207B Datasheet (PDF)
0.1. ngb8207b.pdf 
Size:130K _onsemi
NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2
7.1. ngb8207ab.pdf Size:124K _onsemi
NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
8.1. ngb8206a.pdf Size:123K _onsemi
NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2
8.2. ngb8202a.pdf Size:123K _onsemi
NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2
8.3. ngb8204a.pdf Size:126K _onsemi
NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http://onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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