NGB8207B - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: NGB8207B

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 165

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 365

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.1

Максимально допустимое напряжение эмиттер-затвор (Ueg): 15

Максимальный постоянный ток коллектора (Ic): 20

Максимальная температура перехода (Tj): 175

Время нарастания: 2320

Емкость коллектора (Cc), pf: 90

Корпус: TO263

Аналог (замена) для NGB8207B

NGB8207B Datasheet (PDF)

1.1. ngb8207b.pdf Size:130K _onsemi

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

3.1. ngb8207ab.pdf Size:124K _onsemi

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

 4.1. ngb8206a.pdf Size:123K _onsemi

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

4.2. ngb8202a.pdf Size:123K _onsemi

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 4.3. ngb8204a.pdf Size:126K _onsemi

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http://onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

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