NGB8207B - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: NGB8207B
Тип транзистора: IGBT + Built-in Zener Diodes
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 165
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 365
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 15
Максимальный постоянный ток коллектора |Ic| @25℃, A: 20
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.1
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 2
Максимальная температура перехода (Tj), ℃: 175
Время нарастания типовое (tr), nS: 2320
Емкость коллектора типовая (Cc), pf: 90
Тип корпуса: TO263
NGB8207B Datasheet (PDF)
ngb8207b.pdf
NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
ngb8207n ngb8207bn.pdf
NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
ngb8207an ngb8207abn.pdf
NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
ngb8207ab.pdf
NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ