Справочник IGBT. NGB8207B

 

NGB8207B Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGB8207B
   Тип транзистора: IGBT + Built-in Zener Diodes
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 165 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 365 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 15 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 2 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 2320 nS
   Coesⓘ - Выходная емкость, типовая: 90 pF
   Тип корпуса: TO263
     - подбор IGBT транзистора по параметрам

 

NGB8207B Datasheet (PDF)

 ..1. Size:130K  onsemi
 ngb8207b.pdf pdf_icon

NGB8207B

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 0.1. Size:130K  1
 ngb8207n ngb8207bn.pdf pdf_icon

NGB8207B

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 7.1. Size:124K  1
 ngb8207an ngb8207abn.pdf pdf_icon

NGB8207B

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 7.2. Size:124K  onsemi
 ngb8207ab.pdf pdf_icon

NGB8207B

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , TGAN20N135FD , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G .

History: HGTG40N60C3 | IRG7PH42U | IRG4RC10UD | RJH60D3DPP-M0 | APT20GN60BG | IHW20T120 | WGW15G120N

 

 
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