NGB8207B - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: NGB8207B
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 165
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 365
Напряжение насыщения коллектор-эмиттер (Ucesat): 2.1
Максимально допустимое напряжение эмиттер-затвор (Ueg): 15
Максимальный постоянный ток коллектора (Ic): 20
Максимальная температура перехода (Tj): 175
Время нарастания: 2320
Емкость коллектора (Cc), pf: 90
Корпус: TO263
NGB8207B Datasheet (PDF)
1.1. ngb8207b.pdf Size:130K _onsemi
NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2
3.1. ngb8207ab.pdf Size:124K _onsemi
NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
4.1. ngb8206a.pdf Size:123K _onsemi
NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2
4.2. ngb8202a.pdf Size:123K _onsemi
NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2
4.3. ngb8204a.pdf Size:126K _onsemi
NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http://onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2
Другие IGBT... WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , G30N60C3D , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G .



Список транзисторов
Обновления
IGBT: MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170 | IXBH9N160 |