NGB8207B - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: NGB8207B
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 165
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 365
Напряжение насыщения коллектор-эмиттер (Ucesat): 2.1
Максимально допустимое напряжение эмиттер-затвор (Ueg): 15
Максимальный постоянный ток коллектора (Ic): 20
Максимальная температура перехода (Tj): 175
Время нарастания: 2320
Емкость коллектора (Cc), pf: 90
Тип корпуса: TO263
NGB8207B Datasheet (PDF)
..1. ngb8207b.pdf Size:130K _onsemi
NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
7.1. ngb8207ab.pdf Size:124K _onsemi
NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
8.1. ngb8206a.pdf Size:123K _onsemi
NGB8206N, NGB8206ANIgnition IGBT20 A, 350 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
8.2. ngb8202a.pdf Size:123K _onsemi
NGB8202N, NGB8202ANIgnition IGBT20 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
8.3. ngb8204a.pdf Size:126K _onsemi
NGB8204N, NGB8204ANIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featureshttp://onsemi.commonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses18 AMPS, 400 VOLTSinclude Ignition, Direct Fuel Injection, or wherever high voltage andVCE(on) 3 2
Другие IGBT... WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , RJP6065DPM , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G .



Список транзисторов
Обновления
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