AOB15B60D Todos los transistores

 

AOB15B60D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB15B60D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 167 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.6(typ) V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 19 nS
   Coesⓘ - Capacitancia de salida, typ: 97 pF
   Qgⓘ - Carga total de la puerta, typ: 25.4 nC
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

AOB15B60D Datasheet (PDF)

 ..1. Size:675K  aosemi
 aob15b60d.pdf pdf_icon

AOB15B60D

AOB15B60DTM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to

 7.1. Size:556K  aosemi
 aot15b65m1 aob15b65m1.pdf pdf_icon

AOB15B60D

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 7.2. Size:654K  aosemi
 aob15b65mq1.pdf pdf_icon

AOB15B60D

AOT15B65MQ1/AOB15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables hig

 7.3. Size:1166K  aosemi
 aob15b65m1.pdf pdf_icon

AOB15B60D

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

MOSTRAR MÁS

Otros transistores... WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , CRG60T60AK3HD , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G , APT15GN120SDQ1G .

History: IRGP30B60KD-E | FGA90N33ATD | IRGP4066D-E | FGA25N120ANTD | IRGB4060D | SGB15N60HS | DGC60F65M

 

 
Back to Top

 


 
.