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AOB15B60D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB15B60D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 167

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.6

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 19

Capacitancia de salida (Cc), pF: 97

Empaquetado / Estuche: TO263

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AOB15B60D Datasheet (PDF)

1.1. aob15b60d.pdf Size:675K _aosemi

AOB15B60D
AOB15B60D

AOB15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

3.1. aot15b65m1 aob15b65m1.pdf Size:556K _aosemi

AOB15B60D
AOB15B60D

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE • Latest AlphaIGBT (α IGBT) technology 650V • 650V breakdown voltage IC (TC=100°C) 15A • Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25°C) 1.7V • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high eff

 5.1. aob15s65.pdf Size:302K _aosemi

AOB15B60D
AOB15B60D

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

5.2. aob15s65l.pdf Size:302K _aosemi

AOB15B60D
AOB15B60D

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

 5.3. aob15s60l.pdf Size:343K _aosemi

AOB15B60D
AOB15B60D

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

5.4. aob15s60.pdf Size:343K _aosemi

AOB15B60D
AOB15B60D

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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