All IGBT. AOB15B60D Datasheet

 

AOB15B60D IGBT. Datasheet pdf. Equivalent

Type Designator: AOB15B60D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 167

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.6

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 19

Maximum Collector Capacity (Cc), pF: 97

Package: TO263

AOB15B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOB15B60D Datasheet (PDF)

1.1. aob15b60d.pdf Size:675K _igbt_a

AOB15B60D
AOB15B60D

AOB15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

1.2. aob15b60d.pdf Size:680K _aosemi

AOB15B60D
AOB15B60D

AOB15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

 5.1. aob15s65.pdf Size:302K _aosemi

AOB15B60D
AOB15B60D

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

5.2. aob15s65l.pdf Size:302K _aosemi

AOB15B60D
AOB15B60D

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

 5.3. aob15s60l.pdf Size:343K _aosemi

AOB15B60D
AOB15B60D

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

5.4. aob15s60.pdf Size:343K _aosemi

AOB15B60D
AOB15B60D

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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