IRGSL8B60K Todos los transistores

 

IRGSL8B60K - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGSL8B60K

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 167

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.8

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 28

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 22

Capacitancia de salida (Cc), pF: 38

Empaquetado / Estuche: TO262

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IRGSL8B60K Datasheet (PDF)

1.1. irgsl8b60k.pdf Size:472K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 94545C IRGB8B60K IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL8B60K C Features VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 20A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G tsc>10µs, TJ=150°C E VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Control

5.1. irgsl6b60k.pdf Size:249K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 94575A IRGB6B60K IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60K C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 7.0A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G tsc > 10µs, TJ=150°C E VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Con

5.2. irgsl4640d.pdf Size:809K _international_rectifier

IRGSL8B60K
IRGSL8B60K

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100°C E E E E tSC ≥ 5µs, TJ(max) = 175°C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

 5.3. irgsl6b60kd.pdf Size:311K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 7.0A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive VCE (

5.4. irgsl4b60k.pdf Size:299K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 6.8A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G • Maximum Junction Temperature rated at 175°C. tsc > 10µs, TJ=150°C E VCE(on) typ. = 2.1V Benefits

 5.5. irgsl4b60kd1.pdf Size:442K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated

5.6. irgsl14c40l.pdf Size:160K _international_rectifier

IRGSL8B60K
IRGSL8B60K

 IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector • CES = • • C C • • CE(on) R1 • Gate R2 • L(min) •

5.7. auirgsl30b60k.pdf Size:305K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100°C • 10µs Short Circuit Capability at TJ=175°C • Square RBSOA G tsc > 10µs, TJ=150°C • Positive VCE(on) Temperature Coefficient E • Maximum Junction Temperature rated at 175°C VCE(on) typ.

5.8. auirgsl4062d1.pdf Size:415K _international_rectifier

IRGSL8B60K
IRGSL8B60K

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

5.9. irgsl15b60kd.pdf Size:332K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 15A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive V

5.10. irgsl30b60k.pdf Size:339K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100°C • Low VCE (on) Non Punch Through IGBT Technology. at TJ=175°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated at 175°C. VCE(on) typ.

5.11. irgsl10b60kd.pdf Size:111K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 12A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive V

5.12. irgsl4062d.pdf Size:460K _international_rectifier

IRGSL8B60K
IRGSL8B60K

PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 µS short circuit SOA G • Square RBSOA tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated cur

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