Справочник IGBT. IRGSL8B60K

 

IRGSL8B60K - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRGSL8B60K

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 167

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.8

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 28

Максимальная температура перехода (Tj): 175

Время нарастания: 22

Емкость коллектора (Cc), pf: 38

Корпус: TO262

Аналог (замена) для IRGSL8B60K

 

 

IRGSL8B60K Datasheet (PDF)

1.1. irgsl8b60k.pdf Size:472K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 94545C IRGB8B60K IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL8B60K C Features VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 20A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G tsc>10µs, TJ=150°C E VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Control

5.1. irgsl14c40l.pdf Size:160K _igbt

IRGSL8B60K
IRGSL8B60K

 IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector • CES = • • C C • • CE(on) R1 • Gate R2 • L(min) •

5.2. irgsl30b60k.pdf Size:339K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100°C • Low VCE (on) Non Punch Through IGBT Technology. at TJ=175°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated at 175°C. VCE(on) typ.

 5.3. irgsl6b60kd.pdf Size:311K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 7.0A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive VCE (

5.4. irgsl4062d.pdf Size:460K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (ON) Trench IGBT Technology • Low switching losses IC = 24A, TC = 100°C • Maximum Junction temperature 175 °C • 5 µS short circuit SOA G • Square RBSOA tSC ≥ 5µs, TJ(max) = 175°C • 100% of the parts tested for 4X rated cur

 5.5. irgsl15b60kd.pdf Size:332K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 15A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive V

5.6. irgsl4640d.pdf Size:809K _igbt

IRGSL8B60K
IRGSL8B60K

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100°C E E E E tSC ≥ 5µs, TJ(max) = 175°C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

5.7. irgsl6b60k.pdf Size:249K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 94575A IRGB6B60K IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60K C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 7.0A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G tsc > 10µs, TJ=150°C E VCE(on) typ. = 1.8V n-channel Benefits • Benchmark Efficiency for Motor Con

5.8. irgsl4b60kd1.pdf Size:442K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated

5.9. irgsl4b60k.pdf Size:299K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. IC = 6.8A, TC=100°C • Square RBSOA. • Positive VCE (on) Temperature Coefficient. G • Maximum Junction Temperature rated at 175°C. tsc > 10µs, TJ=150°C E VCE(on) typ. = 2.1V Benefits

5.10. irgsl10b60kd.pdf Size:111K _igbt

IRGSL8B60K
IRGSL8B60K

PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. IC = 12A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G • Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10µs, TJ=150°C • Positive V

5.11. auirgsl4062d1.pdf Size:415K _igbt_a

IRGSL8B60K
IRGSL8B60K

AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features • Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A • Low Switching Losses • 5μs SCSOA G tSC ≥ 5μs, TJ(max) = 175°C • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient.

5.12. auirgsl30b60k.pdf Size:305K _igbt_a

IRGSL8B60K
IRGSL8B60K

PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100°C • 10µs Short Circuit Capability at TJ=175°C • Square RBSOA G tsc > 10µs, TJ=150°C • Positive VCE(on) Temperature Coefficient E • Maximum Junction Temperature rated at 175°C VCE(on) typ.

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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Обновления

IGBT: STGP7NC60KD | STGF7NC60KD | STGB7NC60KD | FGH75T65UPD | STGW38IH120D | MBQ50T65FDSC | SL40N60FL | PDMB100E6 | SSG60N60N | JNG25N120HS |
 

 

 

 

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