All IGBT. IRGSL8B60K Datasheet

 

IRGSL8B60K Datasheet and Replacement


   Type Designator: IRGSL8B60K
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 167 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 28 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 38 pF
   Qg ⓘ - Total Gate Charge, typ: 29 nC
   Package: TO262
 

 IRGSL8B60K substitution

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IRGSL8B60K Datasheet (PDF)

 ..1. Size:472K  international rectifier
irgsl8b60k.pdf pdf_icon

IRGSL8B60K

PD - 94545CIRGB8B60KIRGS8B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL8B60KCFeaturesVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 20A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient. Gtsc>10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Control

 9.1. Size:311K  international rectifier
irgsl6b60kd.pdf pdf_icon

IRGSL8B60K

PD - 94381EIRGB6B60KDIRGS6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL6B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 7.0A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive VCE (

 9.2. Size:332K  international rectifier
irgsl15b60kd.pdf pdf_icon

IRGSL8B60K

PD - 95194IRGB15B60KDPbFIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 15A, TC=100C 10s Short Circuit Capability. Square RBSOA.Gtsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive V

 9.3. Size:160K  international rectifier
irgsl14c40l.pdf pdf_icon

IRGSL8B60K

IRGS14C40LIRGSL14C40LIgnition IGBTIRGB14C40LIGBT with on-chip Gate-Emitter and Gate-Collector clampsTERMINAL DIAGRAMCollector CES = C C CE(on) R1 GateR2 L(min)

Datasheet: IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IKW50N60H3 , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 , APT15GN120BDQ1G , APT15GN120SDQ1G , APT20GF120BRDQ1G .

History: APT20GN60KG | NGTG15N60S1

Keywords - IRGSL8B60K transistor datasheet

 IRGSL8B60K cross reference
 IRGSL8B60K equivalent finder
 IRGSL8B60K lookup
 IRGSL8B60K substitution
 IRGSL8B60K replacement

 

 
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