IRGSL8B60K Datasheet. Specs and Replacement
Type Designator: IRGSL8B60K 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 167 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 28 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 38 pF
Package: TO262
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IRGSL8B60K datasheet
..1. Size:472K international rectifier
irgsl8b60k.pdf 
PD - 94545C IRGB8B60K IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL8B60K C Features VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 20A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G tsc>10 s, TJ=150 C E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Control... See More ⇒
9.1. Size:311K international rectifier
irgsl6b60kd.pdf
PD - 94381E IRGB6B60KD IRGS6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL6B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 7.0A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive VCE (... See More ⇒
9.2. Size:332K international rectifier
irgsl15b60kd.pdf
PD - 95194 IRGB15B60KDPbF IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL15B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 15A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive V... See More ⇒
9.3. Size:160K international rectifier
irgsl14c40l.pdf
IRGS14C40L IRGSL14C40L Ignition IGBT IRGB14C40L IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector CES = C C CE(on) R1 Gate R2 L(min) ... See More ⇒
9.4. Size:437K international rectifier
irgb4b60kd1pbf irgs4b60kd1pbf irgsl4b60kd1pbf.pdf
PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperatu... See More ⇒
9.5. Size:249K international rectifier
irgsl6b60k.pdf
PD - 94575A IRGB6B60K IRGS6B60K INSULATED GATE BIPOLAR TRANSISTOR IRGSL6B60K C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 7.0A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G tsc > 10 s, TJ=150 C E VCE(on) typ. = 1.8V n-channel Benefits Benchmark Efficiency for Motor Con... See More ⇒
9.6. Size:809K international rectifier
irgsl4640d.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC... See More ⇒
9.7. Size:442K international rectifier
irgsl4b60kd1.pdf
PD - 94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated ... See More ⇒
9.8. Size:460K international rectifier
irgsl4062d.pdf
PD - 97355B IRGS4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4062DPbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low VCE (ON) Trench IGBT Technology Low switching losses IC = 24A, TC = 100 C Maximum Junction temperature 175 C 5 S short circuit SOA G Square RBSOA tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated cur... See More ⇒
9.9. Size:111K international rectifier
irgsl10b60kd.pdf
PD - 94925 IRGB10B60KDPbF IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL10B60KD ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. IC = 12A, TC=100 C 10 s Short Circuit Capability. Square RBSOA. G Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10 s, TJ=150 C Positive V... See More ⇒
9.10. Size:305K international rectifier
auirgsl30b60k.pdf
PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100 C 10 s Short Circuit Capability at TJ=175 C Square RBSOA G tsc > 10 s, TJ=150 C Positive VCE(on) Temperature Coefficient E Maximum Junction Temperature rated at 175 C VCE(on) typ.... See More ⇒
9.11. Size:415K international rectifier
auirgsl4062d1.pdf
AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE VCES = 600V Features Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5 s SCSOA G tSC 5 s, TJ(max) = 175 C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.... See More ⇒
9.12. Size:299K international rectifier
irgsl4b60k.pdf
PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10 s Short Circuit Capability. IC = 6.8A, TC=100 C Square RBSOA. Positive VCE (on) Temperature Coefficient. G Maximum Junction Temperature rated at 175 C. tsc > 10 s, TJ=150 C E VCE(on) typ. = 2.1V Benefits ... See More ⇒
9.13. Size:339K international rectifier
irgsl30b60k.pdf
PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100 C Low VCE (on) Non Punch Through IGBT Technology. at TJ=175 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175 C. VCE(on) typ. ... See More ⇒
9.14. Size:792K infineon
irgs4640dpbf irgsl4640dpbf irgb4640dpbf irgp4640dpbf irgp4640d-epbf.pdf
IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC... See More ⇒
Specs: IRG4MC50U, MMIX4B20N300, AOB10B60D, AOK10B60D, AOT10B60D, NGB8207AB, NGB8207B, AOB15B60D, SGH80N60UFD, AOK15B60D, APT20GT60BRDQ1G, APT20GT60BRG, APT20GT60KRG, RJH1CF5RDPQ-80, APT15GN120BDQ1G, APT15GN120SDQ1G, APT20GF120BRDQ1G
Keywords - IRGSL8B60K transistor spec
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