RJH1CF5RDPQ-80 Todos los transistores

 

RJH1CF5RDPQ-80 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH1CF5RDPQ-80

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 192.3

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.95

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 50

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 57

Capacitancia de salida (Cc), pF: 36

Empaquetado / Estuche: TO247

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RJH1CF5RDPQ-80 Datasheet (PDF)

1.1. rjh1cf5rdpq-80.pdf Size:96K _igbt

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

 Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features • Voltage resonance circuit use • Reverse conducting IGBT with monolithic body diode • High efficiency device for induction heating • Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2

4.1. rjh1cf4rdpq-80.pdf Size:96K _igbt

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

 Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features • Voltage resonance circuit use • Reverse conducting IGBT with monolithic body diode • High efficiency device for induction heating • Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25

4.2. rjh1cf7rdpq-80.pdf Size:97K _igbt

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

 Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features • Voltage resonance circuit use • Reverse conducting IGBT with monolithic body diode • High efficiency device for induction heating • Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2

 4.3. rjh1cf6rdpq-80.pdf Size:96K _igbt

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

 Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2010 Features • Voltage resonance circuit use • Reverse conducting IGBT with monolithic body diode • High efficiency device for induction heating • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25

Otros transistores... NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , 20N60C3DR , APT15GN120BDQ1G , APT15GN120SDQ1G , APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG .

 

 
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