Справочник IGBT. RJH1CF5RDPQ-80

 

RJH1CF5RDPQ-80 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH1CF5RDPQ-80
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 192.3
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 50
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.95
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 57
   Емкость коллектора типовая (Cc), pf: 36
   Тип корпуса: TO247

 Аналог (замена) для RJH1CF5RDPQ-80

 

 

RJH1CF5RDPQ-80 Datasheet (PDF)

 ..1. Size:96K  renesas
rjh1cf5rdpq-80.pdf

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2

 8.1. Size:97K  renesas
rjh1cf7rdpq-80.pdf

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2

 8.2. Size:96K  renesas
rjh1cf6rdpq-80.pdf

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2010Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25

 8.3. Size:96K  renesas
rjh1cf4rdpq-80.pdf

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25

Другие IGBT... NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , IXYP20N65C3D1 , APT15GN120BDQ1G , APT15GN120SDQ1G , APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG .

 

 
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