RJH1CF5RDPQ-80 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: RJH1CF5RDPQ-80
Тип транзистора: IGBT
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc), W: 192.3
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
Максимальный постоянный ток коллектора |Ic| @25℃, A: 50
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.95
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 57
Емкость коллектора типовая (Cc), pf: 36
Тип корпуса: TO247
Аналог (замена) для RJH1CF5RDPQ-80
RJH1CF5RDPQ-80 Datasheet (PDF)
rjh1cf5rdpq-80.pdf

Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2
rjh1cf4rdpq-80.pdf

Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25
rjh1cf7rdpq-80.pdf

Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2
rjh1cf6rdpq-80.pdf

Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2010Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25
Другие IGBT... NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , SGT50T65FD1PN , APT15GN120BDQ1G , APT15GN120SDQ1G , APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG .



Список транзисторов
Обновления
IGBT: HIA20N140IH-DA | HIA50N65IH-JA | HIA50N65H-SA | HIA50N65T-SA | HIA50N65H-JA | HIA50N65T-JA | HIA30N140CIH-DA | HIA40N120T-SA | HIW30N65T-SA | HIA30N65T-SA | HIA75N65H-SA