RJH1CF5RDPQ-80 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: RJH1CF5RDPQ-80

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 192.3

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.95

Максимально допустимое напряжение эмиттер-затвор (Ueg): 30

Максимальный постоянный ток коллектора (Ic): 50

Максимальная температура перехода (Tj): 150

Время нарастания: 57

Емкость коллектора (Cc), pf: 36

Тип корпуса: TO247

Аналог (замена) для RJH1CF5RDPQ-80

RJH1CF5RDPQ-80 Datasheet (PDF)

..1. rjh1cf5rdpq-80.pdf Size:96K _renesas

Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2

8.1. rjh1cf4rdpq-80.pdf Size:96K _renesas

Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25

8.2. rjh1cf7rdpq-80.pdf Size:97K _renesas

Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2

 8.3. rjh1cf6rdpq-80.pdf Size:96K _renesas

Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 12, 2010Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25

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