RJH1CF5RDPQ-80 - аналоги и описание IGBT

 

RJH1CF5RDPQ-80 - Аналоги. Основные параметры


   Наименование: RJH1CF5RDPQ-80
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 192.3 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.95 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 57 nS
   Coesⓘ - Выходная емкость, типовая: 36 pF
   Тип корпуса: TO247
 

 Аналог (замена) для RJH1CF5RDPQ-80

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры RJH1CF5RDPQ-80

 ..1. Size:96K  renesas
 rjh1cf5rdpq-80.pdf pdf_icon

RJH1CF5RDPQ-80

Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2

 8.1. Size:97K  renesas
 rjh1cf7rdpq-80.pdf pdf_icon

RJH1CF5RDPQ-80

Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2

 8.2. Size:96K  renesas
 rjh1cf6rdpq-80.pdf pdf_icon

RJH1CF5RDPQ-80

Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2010 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25

 8.3. Size:96K  renesas
 rjh1cf4rdpq-80.pdf pdf_icon

RJH1CF5RDPQ-80

Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , CRG75T60AK3HD , APT15GN120BDQ1G , APT15GN120SDQ1G , APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG .

 

 
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