All IGBT. RJH1CF5RDPQ-80 Datasheet

 

RJH1CF5RDPQ-80 IGBT. Datasheet pdf. Equivalent

Type Designator: RJH1CF5RDPQ-80

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 192.3

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.95

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 57

Maximum Collector Capacity (Cc), pF: 36

Package: TO247

RJH1CF5RDPQ-80 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH1CF5RDPQ-80 IGBT. Datasheet pdf. Equivalent

Type Designator: RJH1CF5RDPQ-80

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 192.3

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.95

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 57

Maximum Collector Capacity (Cc), pF: 36

Package: TO247

RJH1CF5RDPQ-80 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJH1CF5RDPQ-80 Datasheet (PDF)

0.1. rjh1cf5rdpq-80.pdf Size:96K _renesas

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

 Preliminary Datasheet RJH1CF5RDPQ-80 R07DS0355EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features • Voltage resonance circuit use • Reverse conducting IGBT with monolithic body diode • High efficiency device for induction heating • Low collector to emitter saturation voltage VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 2

8.1. rjh1cf4rdpq-80.pdf Size:96K _renesas

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

 Preliminary Datasheet RJH1CF4RDPQ-80 R07DS0354EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features • Voltage resonance circuit use • Reverse conducting IGBT with monolithic body diode • High efficiency device for induction heating • Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25

8.2. rjh1cf7rdpq-80.pdf Size:97K _renesas

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

 Preliminary Datasheet RJH1CF7RDPQ-80 R07DS0357EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2011 Features • Voltage resonance circuit use • Reverse conducting IGBT with monolithic body diode • High efficiency device for induction heating • Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 2

 8.3. rjh1cf6rdpq-80.pdf Size:96K _renesas

RJH1CF5RDPQ-80
RJH1CF5RDPQ-80

 Preliminary Datasheet RJH1CF6RDPQ-80 R07DS0356EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching May 12, 2010 Features • Voltage resonance circuit use • Reverse conducting IGBT with monolithic body diode • High efficiency device for induction heating • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25

Datasheet: NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , 20N60C3DR , APT15GN120BDQ1G , APT15GN120SDQ1G , APT20GF120BRDQ1G , APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG .

 

 
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