AP30G120ASW IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP30G120ASW datasheet

..1. Size:98K ape
ap30g120asw.pdf pdf_icon

AP30G120ASW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C CO-PAK, IGBT With FRD G C TO-3P G RoHS Compliant E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V

6.1. Size:97K ape
ap30g120sw.pdf pdf_icon

AP30G120SW Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=3.0V@IC=30A C CO-PAK, IGBT with FRD G TO-3P G RoHS Compliant C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V

6.2. Size:99K ape
ap30g120bsw-hf.pdf pdf_icon

AP30G120BSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES 1200V Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C CO-PAK, IGBT With FRD G C TO-3P G RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter

6.3. Size:95K ape
ap30g120w.pdf pdf_icon

AP30G120W Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 1100V High speed switching IC 30A Low Saturation Voltage VCE(sat)=3.0V@IC=30A C G Industry Standard TO-3P Package G RoHS Compliant TO-3P C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1100 V