All IGBT. AP30G120ASW Datasheet

 

AP30G120ASW IGBT. Datasheet pdf. Equivalent

Type Designator: AP30G120ASW

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 3.7

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Maximum Collector Capacity (Cc), pF: 120

Package: TO247

AP30G120ASW Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP30G120ASW Datasheet (PDF)

1.1. ap30g120asw.pdf Size:98K _igbt_a

AP30G120ASW
AP30G120ASW

AP30G120ASW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES 1200V ▼ Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C ▼ CO-PAK, IGBT With FRD G C TO-3P G ▼ RoHS Compliant E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V

1.2. ap30g120asw.pdf Size:98K _a-power

AP30G120ASW
AP30G120ASW

AP30G120ASW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features Ў High Speed Switching VCES 1200V Ў Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C Ў CO-PAK, IGBT With FRD G C TO-3P G Ў RoHS Compliant E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gat

2.1. ap30g120bsw-hf.pdf Size:99K _igbt_a

AP30G120ASW
AP30G120ASW

AP30G120BSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES 1200V ▼ Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C ▼ CO-PAK, IGBT With FRD G C TO-3P G ▼ RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter

2.2. ap30g120csw-hf.pdf Size:99K _igbt_a

AP30G120ASW
AP30G120ASW

AP30G120CSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES 1200V ▼ Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C ▼ CO-PAK, IGBT With FRD G C TO-3P G ▼ RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter

2.3. ap30g120w.pdf Size:95K _igbt_a

AP30G120ASW
AP30G120ASW

AP30G120W Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 1100V ▼ High speed switching IC 30A ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A C G ▼ Industry Standard TO-3P Package G ▼ RoHS Compliant TO-3P C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1100 V

2.4. ap30g120sw.pdf Size:97K _igbt_a

AP30G120ASW
AP30G120ASW

AP30G120SW Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features ▼ High speed switching VCES 1200V ▼ Low Saturation Voltage IC 30A VCE(sat)=3.0V@IC=30A C ▼ CO-PAK, IGBT with FRD G TO-3P G ▼ RoHS Compliant C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V

2.5. ap30g120bsw-hf.pdf Size:99K _a-power

AP30G120ASW
AP30G120ASW

AP30G120BSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features Ў High Speed Switching VCES 1200V Ў Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C Ў CO-PAK, IGBT With FRD G C TO-3P G Ў RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage

2.6. ap30g120csw-hf.pdf Size:99K _a-power

AP30G120ASW
AP30G120ASW

AP30G120CSW-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features Ў High Speed Switching VCES 1200V Ў Low Saturation Voltage IC 30A VCE(sat)=2.9V@IC=30A C Ў CO-PAK, IGBT With FRD G C TO-3P G Ў RoHS Compliant & Halogen-Free E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage

2.7. ap30g120w.pdf Size:94K _a-power

AP30G120ASW
AP30G120ASW

AP30G120W Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 1100V Ў High speed switching IC 30A Ў Low Saturation Voltage VCE(sat)=3.0V@IC=30A C G Ў Industry Standard TO-3P Package G Ў RoHS Compliant TO-3P C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1100 V VGE Gat

2.8. ap30g120sw.pdf Size:92K _a-power

AP30G120ASW
AP30G120ASW

AP30G120SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR WITH FRD. Features Ў High Speed Switching VCES 1200V Ў Low Saturation Voltage IC 30A VCE(sat)=3.0V@IC=30A C Ў CO-PAK, IGBT With FRD G TO-3P Ў RoHS Complian C G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gate-E

Datasheet: APT20GF120SRDQ1G , APT20GF120BRG , APT20GF120KRG , APT30GN60BG , APT30GN60KG , AP30G120W , AP30G100W , AOK30B60D1 , IKW40N120H3 , AP30G120BSW-HF , AP30G120CSW-HF , AP30G120SW , APT28GA60BD15 , APT27GA90BD15 , APT27GA90K , APT27GA90SD15 , APT28GA60K .

 


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