APT13GP120KG Todos los transistores

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 apt13gp120kg.pdf

APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alte

 3.1. Size:151K  apt
 apt13gp120k.pdf

APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alte

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 apt13gp120bdq1g.pdf

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

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 apt13gp120bdf1.pdf

APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provide

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 apt13gp120b.pdf

APT13GP120B TYPICAL PERFORMANCE CURVES APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWE

 4.4. Size:409K  apt
 apt13gp120bg.pdf

TYPICAL PERFORMANCE CURVES APT13GP120B_S(G) 1200V APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. B POWER MOS 7 IGBT D3PAK S C The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch G E Through Technology this IGBT is ideal for many high frequency, high voltage switching G application

 4.5. Size:190K  apt
 apt13gp120bsc.pdf

APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost al