APT13GP120KG PDF and Equivalents Search

 

APT13GP120KG Specs and Replacement

Type Designator: APT13GP120KG

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 12 nS

Coesⓘ - Output Capacitance, typ: 90 pF

Package: TO220

 APT13GP120KG Substitution

- IGBT ⓘ Cross-Reference Search

 

APT13GP120KG datasheet

 ..1. Size:165K  apt
apt13gp120kg.pdf pdf_icon

APT13GP120KG

APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alte... See More ⇒

 3.1. Size:151K  apt
apt13gp120k.pdf pdf_icon

APT13GP120KG

APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alte... See More ⇒

 4.1. Size:424K  apt
apt13gp120bdq1g.pdf pdf_icon

APT13GP120KG

TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency... See More ⇒

 4.2. Size:190K  apt
apt13gp120bdf1.pdf pdf_icon

APT13GP120KG

APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provide... See More ⇒

Specs: APT27GA90SD15 , APT28GA60K , TGAN20N135FD , TGAN20N120FD , APT15GT120BRDQ1G , APT15GT120BRG , APT15GT120SRG , APT13GP120BG , XNF15N60T , APT15GP60BDLG , APT15GP60BDQ1G , APT15GP60KG , APT15GP90BG , APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG .

Keywords - APT13GP120KG transistor spec

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