APT13GP120KG - аналоги, основные параметры, даташиты
Наименование: APT13GP120KG
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 20 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3 V @25℃
tr ⓘ - Время нарастания типовое: 12 nS
Coesⓘ - Выходная емкость, типовая: 90 pF
Тип корпуса: TO220
Аналог (замена) для APT13GP120KG
- подбор ⓘ IGBT транзистора по параметрам
APT13GP120KG даташит
apt13gp120kg.pdf
APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alte
apt13gp120k.pdf
APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-220 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alte
apt13gp120bdq1g.pdf
TYPICAL PERFORMANCE CURVES APT13GP120BDQ1(G) 1200V APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
apt13gp120bdf1.pdf
APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very TO-247 fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provide
Другие IGBT... APT27GA90SD15 , APT28GA60K , TGAN20N135FD , TGAN20N120FD , APT15GT120BRDQ1G , APT15GT120BRG , APT15GT120SRG , APT13GP120BG , XNF15N60T , APT15GP60BDLG , APT15GP60BDQ1G , APT15GP60KG , APT15GP90BG , APT15GP90KG , APT30GT60BRDLG , APT30GT60BRDQ2G , APT30GT60BRG .
History: APT15GP60KG | AP30G100W
History: APT15GP60KG | AP30G100W
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Список транзисторов
Обновления
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