TGHP75N120F2D Todos los transistores

 

TGHP75N120F2D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGHP75N120F2D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 790 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Paquete / Cubierta: TO247

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TGHP75N120F2D Datasheet (PDF)

 ..1. Size:1018K  trinnotech
 tghp75n120f2d.pdf pdf_icon

TGHP75N120F2D

TGHP75N120F2D Field Stop Trench IGBT Features TO-247 PLUS 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Solar Inverter, UPS Device Package Marking Remark TGHP75N120F2D TO-247 PL

 3.1. Size:970K  trinnotech
 tghp75n120fdr.pdf pdf_icon

TGHP75N120F2D

TGHP75N120FDR Field Stop Trench IGBT Features TO-247 PLUS 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification Applications Inverter, Solar, UPS, Welder Device Package Marking Remark TGHP75N120FDR TO-247 PLUS TGHP75N120

Otros transistores... TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGPF4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
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