TGHP75N120F2D Todos los transistores

 

TGHP75N120F2D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGHP75N120F2D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 790 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Qgⓘ - Carga total de la puerta, typ: 536 nC
   Paquete / Cubierta: TO247
 

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TGHP75N120F2D Datasheet (PDF)

 ..1. Size:1018K  trinnotech
 tghp75n120f2d.pdf pdf_icon

TGHP75N120F2D

TGHP75N120F2DField Stop Trench IGBTFeaturesTO-247 PLUS 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationApplications Solar Inverter, UPSDevice Package Marking RemarkTGHP75N120F2D TO-247 PL

 3.1. Size:970K  trinnotech
 tghp75n120fdr.pdf pdf_icon

TGHP75N120F2D

TGHP75N120FDRField Stop Trench IGBTFeaturesTO-247 PLUS 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationApplicationsInverter, Solar, UPS, WelderDevice Package Marking RemarkTGHP75N120FDR TO-247 PLUS TGHP75N120

Otros transistores... TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , RJP30H2A , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

History: VS-40MT120UHAPBF

 

 
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History: VS-40MT120UHAPBF

TGHP75N120F2D   TGHP75N120F2D   TGHP75N120F2D  

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