All IGBT. TGHP75N120F2D Datasheet

 

TGHP75N120F2D Datasheet and Replacement


   Type Designator: TGHP75N120F2D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 790 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   Qg ⓘ - Total Gate Charge, typ: 536 nC
   Package: TO247
 

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TGHP75N120F2D Datasheet (PDF)

 ..1. Size:1018K  trinnotech
 tghp75n120f2d.pdf pdf_icon

TGHP75N120F2D

TGHP75N120F2DField Stop Trench IGBTFeaturesTO-247 PLUS 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationApplications Solar Inverter, UPSDevice Package Marking RemarkTGHP75N120F2D TO-247 PL

 3.1. Size:970K  trinnotech
 tghp75n120fdr.pdf pdf_icon

TGHP75N120F2D

TGHP75N120FDRField Stop Trench IGBTFeaturesTO-247 PLUS 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationApplicationsInverter, Solar, UPS, WelderDevice Package Marking RemarkTGHP75N120FDR TO-247 PLUS TGHP75N120

Datasheet: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , RJP30H2A , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

History: IXGN200N60B3 | TGHP75N120FDR | OST40N120HMF | F3L200R12W2H3_B11 | VS-GB150TH120N | APT50GN60BG

Keywords - TGHP75N120F2D transistor datasheet

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