All IGBT. 10N40F1D Datasheet

 

10N40F1D IGBT. Datasheet pdf. Equivalent

Type Designator: 10N40F1D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 400

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Package: TO220

10N40F1D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

10N40F1D Datasheet (PDF)

8.1. hgtp10n40f.pdf Size:43K _harris_semi

10N40F1D
10N40F1D

HGTP10N40F1D,S E M I C O N D U C T O RHGTP10N50F1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V Latch Free OperationEMITTER Typical Fall Time

9.1. mtp10n40e.pdf Size:151K _motorola

10N40F1D
10N40F1D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETN Channel Enhancement Mode Silicon GateTMOS POWE

9.2. mtw10n40e.pdf Size:74K _motorola

10N40F1D
10N40F1D

 9.3. mtb10n40e.pdf Size:234K _motorola

10N40F1D
10N40F1D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB10N40E/DDesigner's Data SheetMTB10N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface Mount

9.4. mtp10n40erev0x.pdf Size:249K _motorola

10N40F1D
10N40F1D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETN Channel Enhancement Mode Silicon GateTMOS POWE

 9.5. mtb10n40erev0x.pdf Size:273K _motorola

10N40F1D
10N40F1D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB10N40E/DDesigner's Data SheetMTB10N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface Mount

9.6. php10n40 1.pdf Size:53K _philips

10N40F1D
10N40F1D

Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 10.7 Ablocking voltage, fast switching and Ptot Total power di

9.7. mtp10n35 mtp10n40.pdf Size:79K _njs

10N40F1D
10N40F1D

9.8. sihf10n40d.pdf Size:168K _vishay

10N40F1D
10N40F1D

SiHF10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 7

9.9. sihb10n40d.pdf Size:144K _vishay

10N40F1D
10N40F1D

SiHB10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Con

9.10. sihp10n40d.pdf Size:211K _vishay

10N40F1D
10N40F1D

SiHP10N40Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.6- Low Input Capacitance (Ciss)Qg max. (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Con

9.11. 10n40.pdf Size:170K _utc

10N40F1D
10N40F1D

UNISONIC TECHNOLOGIES CO., LTD 10N40 Preliminary Power MOSFET 10.5 Amps, 400 Volts N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 10N40 is an N-channel mode power MOSFET usingUTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. I

9.12. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

10N40F1D
10N40F1D

HGTP10N40C1D, HGTP10N40E1D,S E M I C O N D U C T O RHGTP10N50C1D, HGTP10N50E1D10A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1s, 0.5sGATE Low On-State VoltageCOLLECTOR Fast Switching Speeds(FLANGE) High Input Impeda

9.13. ftp10n40 fta10n40.pdf Size:425K _ark-micro

10N40F1D
10N40F1D

FTP10N40/FTA10N40400V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 400V 0.50 10A Low Gate Charge (typical 34nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Applications High Efficiency SMPS Adaptor/Charger LCD Panel Power Switching application Ordering Information Part Number Package Marking F

9.14. sif10n40c.pdf Size:375K _sisemi

10N40F1D
10N40F1D

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF10N40CN- MOS / N-CHANNEL POWER MOSFET SIF10N40C

9.15. mtn10n40e3.pdf Size:236K _cystek

10N40F1D
10N40F1D

Spec. No. : C586E3 Issued Date : 2011.04.18 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 400V RDS(ON) : 0.47(typ.) MTN10N40E3 ID : 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

9.16. cm10n40.pdf Size:119K _jdsemi

10N40F1D
10N40F1D

RC1N0M04 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 400V N-Channel VDMOS RoHS 12 3TO-2

9.17. msf10n40.pdf Size:1096K _bruckewell

10N40F1D
10N40F1D

MSF10N40 400V N-Channel MOSFET Description The MSF10N40 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intri

Datasheet: 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 

 
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