VS-GA100NA60UP Todos los transistores

 ..1. Size:228K  vishay
 vs-ga100na60up.pdf

VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES Ultrafast Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolated package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical)

 6.1. Size:171K  vishay
 vs-ga100ts60sfpbf.pdf

VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors Half-Bridge IGBT INT-A-PAK, (Standard Speed IGBT), 100 A FEATURES Standard speed PT IGBT technology Optimized for hard switching speed FRED Pt antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Designed for industrial level Material catego

 6.2. Size:258K  vishay
 vs-ga100ts120upbf.pdf

VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 100 A FEATURES Generation 4 IGBT technology Ultrafast Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard

 9.1. Size:145K  vishay
 vs-ga200hs60s1pbf.pdf

VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT (Standard Speed IGBT), 200 A FEATURES Gen 4 IGBT technology Standard optimized for hard switching speed Very low conduction losses Industry standard package UL approved file E78996 Designed and qualified for industrial level Material categorization for definitions of compl

 9.2. Size:277K  vishay
 vs-ga200sa60up.pdf

VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A FEATURES Ultrafast optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi

 9.3. Size:156K  vishay
 vs-ga200th60s.pdf

VS-GA200TH60S www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 200 A FEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance case Double INT-A-PAK Fast and soft reverse recovery antiparalle

 9.4. Size:292K  vishay
 vs-ga250sa60s.pdf

VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A FEATURES Standard optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outline SOT-227 Designed and qualified for i