VS-GA100NA60UP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: VS-GA100NA60UP
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 250 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 80 nS
Coesⓘ - Выходная емкость, типовая: 730 pF
Тип корпуса: SOT227
Аналог (замена) для VS-GA100NA60UP
VS-GA100NA60UP Datasheet (PDF)
vs-ga100na60up.pdf
VS-GA100NA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 AFEATURES Ultrafast: Optimized for minimum saturationvoltage and speed 0 to 40 kHz in hardswitching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolated package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical)
vs-ga100ts60sfpbf.pdf
VS-GA100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf-Bridge IGBT INT-A-PAK,(Standard Speed IGBT), 100 AFEATURES Standard speed PT IGBT technology Optimized for hard switching speed FRED Pt antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Designed for industrial level Material catego
vs-ga100ts120upbf.pdf
VS-GA100TS120UPbFwww.vishay.comVishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 100 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard
vs-ga200hs60s1pbf.pdf
VS-GA200HS60S1PbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half Bridge IGBT(Standard Speed IGBT), 200 AFEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Very low conduction losses Industry standard package UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compl
vs-ga200sa60up.pdf
VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi
vs-ga200th60s.pdf
VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle
vs-ga250sa60s.pdf
VS-GA250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Ultralow VCE(on), 250 AFEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outlineSOT-227 Designed and qualified for i
Другие IGBT... APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , GT30J124 , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 .
Список транзисторов
Обновления
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