VS-GA100NA60UP IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GA100NA60UP
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 730 pF
Qgⓘ - Total Gate Charge, typ: 430 nC
Package: SOT227
VS-GA100NA60UP Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GA100NA60UP Datasheet (PDF)
vs-ga100na60up.pdf
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vs-ga100ts60sfpbf.pdf
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vs-ga100ts120upbf.pdf
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vs-ga200hs60s1pbf.pdf
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vs-ga200sa60up.pdf
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vs-ga200th60s.pdf
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Datasheet: APT30GT60BRG , APT30GS60BRDQ2G , APT30GS60SRDQ2G , AP50GT60SW-HF , MMIX1X100N60B3H1 , RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , GT30J124 , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 .
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