RJH60F6BDPQ-A0 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH60F6BDPQ-A0
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 297.6 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Encapsulados: TO247A
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RJH60F6BDPQ-A0 datasheet
rjh60f6bdpq-a0.pdf
Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100 600V - 45A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at
rjh60f6dpq-a0.pdf
Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a
r07ds0236ej rjh60f6dpk.pdf
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
rjh60f6dpk.pdf
Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s
Otros transistores... APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJP30E2DPP-M0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 .
History: APT150GN60J | APT40GP90B
History: APT150GN60J | APT40GP90B
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