RJH60F6BDPQ-A0 Todos los transistores

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RJH60F6BDPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60F6BDPQ-A0

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 297.6

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.35

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 85

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 80

Capacitancia de salida (Cc), pF: 150

Empaquetado / Estuche: TO247A

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RJH60F6BDPQ-A0 Datasheet (PDF)

1.1. rjh60f6bdpq-a0.pdf Size:93K _igbt

RJH60F6BDPQ-A0
RJH60F6BDPQ-A0

 Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100 600V - 45A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (at

3.1. r07ds0327ej rjh60f6dpq.pdf Size:90K _renesas

RJH60F6BDPQ-A0
RJH60F6BDPQ-A0

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching tf = 74 ns typ. (at IC = 30 A,

3.2. r07ds0236ej rjh60f6dpk.pdf Size:86K _renesas

RJH60F6BDPQ-A0
RJH60F6BDPQ-A0

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous: REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features ? Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) ? Built in fast recovery diode in one package ? Trench gate and thin wafer technology ? High speed switching t

3.3. rjh60f6dpq-a0.pdf Size:87K _igbt

RJH60F6BDPQ-A0
RJH60F6BDPQ-A0

 Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tf = 74 ns typ. (a

3.4. rjh60f6dpk.pdf Size:83K _igbt

RJH60F6BDPQ-A0
RJH60F6BDPQ-A0

 Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous: REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features  Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed s

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