RJH60F6BDPQ-A0 IGBT. Datasheet pdf. Equivalent

   Type Designator: RJH60F6BDPQ-A0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 297.6 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO247A

RJH60F6BDPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH60F6BDPQ-A0 Datasheet (PDF)

..1. Size:93K renesas
rjh60f6bdpq-a0.pdf

Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100600V - 45A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at

7.1. Size:87K renesas
rjh60f6dpq-a0.pdf

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200600 V - 45 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a

7.2. Size:86K renesas
r07ds0236ej rjh60f6dpk.pdf

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200(Previous: REJ03G1940-0100)Silicon N Channel IGBT Rev.2.00High Speed Power Switching Nov 30, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s

7.3. Size:83K renesas
rjh60f6dpk.pdf