RJH60F6BDPQ-A0 PDF and Equivalents Search

 

RJH60F6BDPQ-A0 Specs and Replacement

Type Designator: RJH60F6BDPQ-A0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 297.6 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 85 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 150 pF

Package: TO247A

 RJH60F6BDPQ-A0 Substitution

- IGBT ⓘ Cross-Reference Search

 

RJH60F6BDPQ-A0 datasheet

 ..1. Size:93K  renesas
 rjh60f6bdpq-a0.pdf pdf_icon

RJH60F6BDPQ-A0

Preliminary Datasheet RJH60F6BDPQ-A0 R07DS0632EJ0100 600V - 45A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at... See More ⇒

 7.1. Size:87K  renesas
 rjh60f6dpq-a0.pdf pdf_icon

RJH60F6BDPQ-A0

Preliminary Datasheet RJH60F6DPQ-A0 R07DS0327EJ0200 600 V - 45 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (a... See More ⇒

 7.2. Size:86K  renesas
 r07ds0236ej rjh60f6dpk.pdf pdf_icon

RJH60F6BDPQ-A0

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s... See More ⇒

 7.3. Size:83K  renesas
 rjh60f6dpk.pdf pdf_icon

RJH60F6BDPQ-A0

Preliminary Datasheet RJH60F6DPK R07DS0236EJ0200 (Previous REJ03G1940-0100) Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Nov 30, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed s... See More ⇒

SHOW MORE

Specs: APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJP30E2DPP-M0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 .

History: STGWA30IH65DF | STGWA100H65DFB2 | STGW60H65DFB | STGWT40H65DFB

Keywords - RJH60F6BDPQ-A0 transistor spec

 RJH60F6BDPQ-A0 cross reference
 RJH60F6BDPQ-A0 equivalent finder
 RJH60F6BDPQ-A0 lookup
 RJH60F6BDPQ-A0 substitution
 RJH60F6BDPQ-A0 replacement

 

 

 

 

↑ Back to Top
.