RJH60F7BDPQ-A0 Todos los transistores

 

RJH60F7BDPQ-A0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH60F7BDPQ-A0

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 328.9

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.35

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 90

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 81

Capacitancia de salida (Cc), pF: 198

Empaquetado / Estuche: TO247A

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RJH60F7BDPQ-A0 Datasheet (PDF)

..1. rjh60f7bdpq-a0.pdf Size:93K _renesas

RJH60F7BDPQ-A0 RJH60F7BDPQ-A0

Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100600V - 50A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at

7.1. rjh60f7adpk.pdf Size:82K _renesas

RJH60F7BDPQ-A0 RJH60F7BDPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed

7.2. rjh60f7dpq-a0.pdf Size:86K _renesas

RJH60F7BDPQ-A0 RJH60F7BDPQ-A0

Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns

 7.3. r07ds0328ej rjh60f7dpq.pdf Size:89K _renesas

RJH60F7BDPQ-A0 RJH60F7BDPQ-A0

Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns

7.4. r07ds0237ej rjh60f7adp.pdf Size:85K _renesas

RJH60F7BDPQ-A0 RJH60F7BDPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed

Otros transistores... APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , FGH60N60SMD , APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD , APT44GA60B , APT44GA60BD30 , APT44GA60S , APT44GA60SD30 .

 

 
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