RJH60F7BDPQ-A0 Datasheet. Specs and Replacement

Type Designator: RJH60F7BDPQ-A0  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 328.9 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 81 nS

Coesⓘ - Output Capacitance, typ: 198 pF

Package: TO247A

  📄📄 Copy 

 RJH60F7BDPQ-A0 Substitution

- IGBTⓘ Cross-Reference Search

 

RJH60F7BDPQ-A0 datasheet

 ..1. Size:93K  renesas
 rjh60f7bdpq-a0.pdf pdf_icon

RJH60F7BDPQ-A0

Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100 600V - 50A - IGBT Rev.1.00 High Speed Power Switching Feb 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at... See More ⇒

 7.1. Size:89K  renesas
 r07ds0328ej rjh60f7dpq.pdf pdf_icon

RJH60F7BDPQ-A0

Preliminary Datasheet B0 RJH60F7DPQ-A0 R07DS0328EJ0200 600 V - 50 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 B1 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns... See More ⇒

 7.2. Size:82K  renesas
 rjh60f7adpk.pdf pdf_icon

RJH60F7BDPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒

 7.3. Size:85K  renesas
 r07ds0237ej rjh60f7adp.pdf pdf_icon

RJH60F7BDPQ-A0

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300 (Previous REJ03G1837-0200) Silicon N Channel IGBT Rev.3.00 High Speed Power Switching Jan 05, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed ... See More ⇒

SHOW MORE

Specs: APT33GF120BRG, RJH60F6BDPQ-A0, AP50G60SW-HF, BSM100GAL120DLCK, TGAN25N120ND, AOK50B60D1, AOK40B60D, CIF25P120P, CRG60T60AK3HD, APT45GP120JDQ2, APT50GP60JDQ2, TGAN30N120FD, TGH30N120FD, APT44GA60B, APT44GA60BD30, APT44GA60S, APT44GA60SD30

Keywords - RJH60F7BDPQ-A0 transistor spec

 RJH60F7BDPQ-A0 cross reference
 RJH60F7BDPQ-A0 equivalent finder
 RJH60F7BDPQ-A0 lookup
 RJH60F7BDPQ-A0 substitution
 RJH60F7BDPQ-A0 replacement