RJH60F7BDPQ-A0 IGBT. Datasheet pdf. Equivalent

   Type Designator: RJH60F7BDPQ-A0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 328.9 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 81 nS
   Coesⓘ - Output Capacitance, typ: 198 pF
   Package: TO247A

RJH60F7BDPQ-A0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH60F7BDPQ-A0 Datasheet (PDF)

..1. Size:93K renesas
rjh60f7bdpq-a0.pdf

Preliminary Datasheet RJH60F7BDPQ-A0 R07DS0633EJ0100600V - 50A - IGBT Rev.1.00High Speed Power Switching Feb 17, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at

7.1. Size:89K renesas
r07ds0328ej rjh60f7dpq.pdf

Preliminary Datasheet B0RJH60F7DPQ-A0 R07DS0328EJ0200600 V - 50 A - IGBT Rev.2.00High Speed Power Switching Jul 22, 2011B1Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns

7.2. Size:82K renesas
rjh60f7adpk.pdf

Preliminary Datasheet RJH60F7ADPK R07DS0237EJ0300(Previous: REJ03G1837-0200)Silicon N Channel IGBT Rev.3.00High Speed Power Switching Jan 05, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed

7.3. Size:85K renesas
r07ds0237ej rjh60f7adp.pdf