APT64GA90LD30 Todos los transistores

 

APT64GA90LD30 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT64GA90LD30
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 26 nS
   Coesⓘ - Capacitancia de salida, typ: 318 pF
   Paquete / Cubierta: TO264
     - Selección de transistores por parámetros

 

APT64GA90LD30 Datasheet (PDF)

 ..1. Size:226K  microsemi
 apt64ga90b2d30 apt64ga90ld30.pdf pdf_icon

APT64GA90LD30

APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

 5.1. Size:199K  microsemi
 apt64ga90b.pdf pdf_icon

APT64GA90LD30

APT64GA90B APT64GA90S 900V High Speed PT IGBTAPT64GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 5.2. Size:199K  microsemi
 apt64ga90s.pdf pdf_icon

APT64GA90LD30

APT64GA90B APT64GA90S 900V High Speed PT IGBTAPT64GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

Otros transistores... APT100GN120J , APT80GP60JDQ3 , 100MT060WDF , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , GT30F132 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B .

History: IXGA20N100A3 | APT44GA60SD30C | APT64GA90S | STGY50NB60HD | STGB10NC60K | RJH60D0DPK

 

 
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