All IGBT. APT64GA90LD30 Datasheet

 

APT64GA90LD30 IGBT. Datasheet pdf. Equivalent


   Type Designator: APT64GA90LD30
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 64 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 318 pF
   Qgⓘ - Total Gate Charge, typ: 162 nC
   Package: TO264

 APT64GA90LD30 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT64GA90LD30 Datasheet (PDF)

 ..1. Size:226K  microsemi
 apt64ga90b2d30 apt64ga90ld30.pdf

APT64GA90LD30 APT64GA90LD30

APT64GA90LD30 APT64GA90B2D30 900V APT64GA90LD30High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

 5.1. Size:199K  microsemi
 apt64ga90b.pdf

APT64GA90LD30 APT64GA90LD30

APT64GA90B APT64GA90S 900V High Speed PT IGBTAPT64GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 5.2. Size:199K  microsemi
 apt64ga90s.pdf

APT64GA90LD30 APT64GA90LD30

APT64GA90B APT64GA90S 900V High Speed PT IGBTAPT64GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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