APT100GN60B2G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APT100GN60B2G datasheet

..1. Size:167K microsemi
apt100gn60b2g.pdf pdf_icon

APT100GT60B2R(G) APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated G Low Forward Voltage Drop CE G CE High Frequency Switching t

4.1. Size:448K apt
apt100gn60ldq4g.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) 600V APT100GN60LDQ4 APT100GN60LDQ4G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264 conduction loss. Easy paralleling is a result of very tight parame

6.1. Size:413K apt
apt100gn120j.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

6.2. Size:181K microsemi
apt100gn120jdq4.pdf pdf_icon

APT100GN120JDQ4 1200V, 100A, VCE(ON) = 1.7V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor