Справочник IGBT. APT100GN60B2G

 

APT100GN60B2G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT100GN60B2G
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 75 nS
   Coesⓘ - Выходная емкость, типовая: 475 pF
   Тип корпуса: TO247 TO264

 Аналог (замена) для APT100GN60B2G

 

 

APT100GN60B2G Datasheet (PDF)

 ..1. Size:167K  microsemi
 apt100gn60b2g.pdf

APT100GN60B2G APT100GN60B2G

APT100GT60B2R(G)APT100GT60LR(G)600V, 100A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated G Low Forward Voltage DropCEGCE High Frequency Switching t

 4.1. Size:448K  apt
 apt100gn60ldq4g.pdf

APT100GN60B2G APT100GN60B2G

TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) 600V APT100GN60LDQ4 APT100GN60LDQ4G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264conduction loss. Easy paralleling is a result of very tight parame

 6.1. Size:413K  apt
 apt100gn120j.pdf

APT100GN60B2G APT100GN60B2G

TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 6.2. Size:181K  microsemi
 apt100gn120jdq4.pdf

APT100GN60B2G APT100GN60B2G

APT100GN120JDQ41200V, 100A, VCE(ON) = 1.7V TypicalUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

 6.3. Size:133K  microsemi
 apt100gn120b2g.pdf

APT100GN60B2G APT100GN60B2G

TYPICAL PERFORMANCE CURVES APT100GN120B2 1200V APT100GN120B2APT100GN120B2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum T-Maxconduction loss. Easy paralleling is a result of very tight parameter d

Другие IGBT... 100MT060WDF , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , STGB10NB37LZ , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 .

 

 
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