APT100GN60B2G - аналоги и описание IGBT

 

APT100GN60B2G - аналоги, основные параметры, даташиты

Наименование: APT100GN60B2G

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 500 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃

tr ⓘ - Время нарастания типовое: 75 nS

Coesⓘ - Выходная емкость, типовая: 475 pF

Тип корпуса: TO247 TO264

 Аналог (замена) для APT100GN60B2G

- подбор ⓘ IGBT транзистора по параметрам

 

APT100GN60B2G даташит

 ..1. Size:167K  microsemi
apt100gn60b2g.pdfpdf_icon

APT100GN60B2G

APT100GT60B2R(G) APT100GT60LR(G) 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated G Low Forward Voltage Drop CE G CE High Frequency Switching t

 4.1. Size:448K  apt
apt100gn60ldq4g.pdfpdf_icon

APT100GN60B2G

TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) 600V APT100GN60LDQ4 APT100GN60LDQ4G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264 conduction loss. Easy paralleling is a result of very tight parame

 6.1. Size:413K  apt
apt100gn120j.pdfpdf_icon

APT100GN60B2G

TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 6.2. Size:181K  microsemi
apt100gn120jdq4.pdfpdf_icon

APT100GN60B2G

APT100GN120JDQ4 1200V, 100A, VCE(ON) = 1.7V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

Другие IGBT... 100MT060WDF , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , MGD623S , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 .

 

 

 

 

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