APT100GN60B2G Datasheet and Replacement
Type Designator: APT100GN60B2G
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 475 pF
Package: TO247 TO264
- IGBT Cross-Reference
APT100GN60B2G Datasheet (PDF)
apt100gn60b2g.pdf

APT100GT60B2R(G)APT100GT60LR(G)600V, 100A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated G Low Forward Voltage DropCEGCE High Frequency Switching t
apt100gn60ldq4g.pdf

TYPICAL PERFORMANCE CURVES APT100GN60LDQ4(G) 600V APT100GN60LDQ4 APT100GN60LDQ4G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum TO-264conduction loss. Easy paralleling is a result of very tight parame
apt100gn120j.pdf

TYPICAL PERFORMANCE CURVES APT100GN120J 1200V APT100GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in
apt100gn120jdq4.pdf

APT100GN120JDQ41200V, 100A, VCE(ON) = 1.7V TypicalUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IRG4PH50S-E | 1MBI1500UE-330-02
Keywords - APT100GN60B2G transistor datasheet
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History: IRG4PH50S-E | 1MBI1500UE-330-02



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