APT200GT60JR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT200GT60JR
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 500
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 100
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.5
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 160
Capacitancia de salida (Cc), typ, pF: 546
Carga total de la puerta (Qg), typ, nC: 946
Paquete / Cubierta: SOT227
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APT200GT60JR Datasheet (PDF)
apt200gt60jr.pdf
APT200GT60JR600V, 200A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated Low Forward Voltage Drop"UL Recognized" High Frequency Switching to 50KHz Lo
apt200gt60jrdl.pdf
TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL600V, 200A, VCE(ON) = 2.0V TypicalResonant Mode Combi IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun-derbolt IGBT offers superior ruggedness and ultrafast switching speed."UL Recognized"Typical ApplicationsISOTOP
apt200gn60j.pdf
TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga
apt200gn60jdq4.pdf
TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built
apt200gn60b2g.pdf
APT200GN60B2G600V, VCE(ON) = 1.45V TypicalField Stop IGBTUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g
Otros transistores... APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , NCE60TD60BT , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , APT150GN60J .
Liste
Recientemente añadidas las descripciónes de los transistores
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