Справочник IGBT. APT200GT60JR

 

APT200GT60JR - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT200GT60JR
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 160 nS
   Coesⓘ - Выходная емкость, типовая: 546 pF
   Qgⓘ - Общий заряд затвора, typ: 946 nC
   Тип корпуса: SOT227

 Аналог (замена) для APT200GT60JR

 

 

APT200GT60JR Datasheet (PDF)

 ..1. Size:199K  microsemi
 apt200gt60jr.pdf

APT200GT60JR APT200GT60JR

APT200GT60JR600V, 200A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated Low Forward Voltage Drop"UL Recognized" High Frequency Switching to 50KHz Lo

 0.1. Size:266K  microsemi
 apt200gt60jrdl.pdf

APT200GT60JR APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL600V, 200A, VCE(ON) = 2.0V TypicalResonant Mode Combi IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun-derbolt IGBT offers superior ruggedness and ultrafast switching speed."UL Recognized"Typical ApplicationsISOTOP

 7.1. Size:474K  apt
 apt200gn60j.pdf

APT200GT60JR APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 7.2. Size:524K  apt
 apt200gn60jdq4.pdf

APT200GT60JR APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 7.3. Size:163K  microsemi
 apt200gn60b2g.pdf

APT200GT60JR APT200GT60JR

APT200GN60B2G600V, VCE(ON) = 1.45V TypicalField Stop IGBTUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

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