APT200GT60JR Даташит. Аналоги. Параметры и характеристики.
Наименование: APT200GT60JR
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 500 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 160 nS
Coesⓘ - Выходная емкость, типовая: 546 pF
Qgⓘ - Общий заряд затвора, typ: 946 nC
Тип корпуса: SOT227
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APT200GT60JR Datasheet (PDF)
apt200gt60jr.pdf

APT200GT60JR600V, 200A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated Low Forward Voltage Drop"UL Recognized" High Frequency Switching to 50KHz Lo
apt200gt60jrdl.pdf

TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL600V, 200A, VCE(ON) = 2.0V TypicalResonant Mode Combi IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun-derbolt IGBT offers superior ruggedness and ultrafast switching speed."UL Recognized"Typical ApplicationsISOTOP
apt200gn60j.pdf

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga
apt200gn60jdq4.pdf

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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