APT200GT60JR - аналоги, основные параметры, даташиты
Наименование: APT200GT60JR
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 500 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃
tr ⓘ - Время нарастания типовое: 160 nS
Coesⓘ - Выходная емкость, типовая: 546 pF
Тип корпуса: SOT227
Аналог (замена) для APT200GT60JR
- подбор ⓘ IGBT транзистора по параметрам
APT200GT60JR даташит
apt200gt60jr.pdf
APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop "UL Recognized" High Frequency Switching to 50KHz Lo
apt200gt60jrdl.pdf
TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun- derbolt IGBT offers superior ruggedness and ultrafast switching speed. "UL Recognized" Typical Applications ISOTOP
apt200gn60j.pdf
TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga
apt200gn60jdq4.pdf
TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built
Другие IGBT... APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , FGH30S130P , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , APT150GN60J .
History: APT15GT60BR | IRG8P15N120KD | TSG25N120CN | APT40GF120JRDQ2 | APT50GT60SRG | APT25GT120BRG
History: APT15GT60BR | IRG8P15N120KD | TSG25N120CN | APT40GF120JRDQ2 | APT50GT60SRG | APT25GT120BRG
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