APT200GT60JR - аналоги и описание IGBT

 

APT200GT60JR - аналоги, основные параметры, даташиты

Наименование: APT200GT60JR

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 500 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5 V @25℃

tr ⓘ - Время нарастания типовое: 160 nS

Coesⓘ - Выходная емкость, типовая: 546 pF

Тип корпуса: SOT227

 Аналог (замена) для APT200GT60JR

- подбор ⓘ IGBT транзистора по параметрам

 

APT200GT60JR даташит

 ..1. Size:199K  microsemi
apt200gt60jr.pdfpdf_icon

APT200GT60JR

APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop "UL Recognized" High Frequency Switching to 50KHz Lo

 0.1. Size:266K  microsemi
apt200gt60jrdl.pdfpdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun- derbolt IGBT offers superior ruggedness and ultrafast switching speed. "UL Recognized" Typical Applications ISOTOP

 7.1. Size:474K  apt
apt200gn60j.pdfpdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 7.2. Size:524K  apt
apt200gn60jdq4.pdfpdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

Другие IGBT... APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , FGH30S130P , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , APT150GN60J .

History: APT15GT60BR | IRG8P15N120KD | TSG25N120CN | APT40GF120JRDQ2 | APT50GT60SRG | APT25GT120BRG

 

 

 

 

↑ Back to Top
.