All IGBT. APT200GT60JR Datasheet

 

APT200GT60JR Datasheet and Replacement


   Type Designator: APT200GT60JR
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 160 nS
   Coesⓘ - Output Capacitance, typ: 546 pF
   Package: SOT227
      - IGBT Cross-Reference

 

APT200GT60JR Datasheet (PDF)

 ..1. Size:199K  microsemi
apt200gt60jr.pdf pdf_icon

APT200GT60JR

APT200GT60JR600V, 200A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated Low Forward Voltage Drop"UL Recognized" High Frequency Switching to 50KHz Lo

 0.1. Size:266K  microsemi
apt200gt60jrdl.pdf pdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL600V, 200A, VCE(ON) = 2.0V TypicalResonant Mode Combi IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun-derbolt IGBT offers superior ruggedness and ultrafast switching speed."UL Recognized"Typical ApplicationsISOTOP

 7.1. Size:474K  apt
apt200gn60j.pdf pdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 7.2. Size:524K  apt
apt200gn60jdq4.pdf pdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 1MBI1500UE-330-02 | IRG4PH50S-E

Keywords - APT200GT60JR transistor datasheet

 APT200GT60JR cross reference
 APT200GT60JR equivalent finder
 APT200GT60JR lookup
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 APT200GT60JR replacement

 

 
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