APT200GT60JR PDF and Equivalents Search

 

APT200GT60JR Specs and Replacement

Type Designator: APT200GT60JR

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃

tr ⓘ - Rise Time, typ: 160 nS

Coesⓘ - Output Capacitance, typ: 546 pF

Package: SOT227

 APT200GT60JR Substitution

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APT200GT60JR datasheet

 ..1. Size:199K  microsemi
apt200gt60jr.pdf pdf_icon

APT200GT60JR

APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop "UL Recognized" High Frequency Switching to 50KHz Lo... See More ⇒

 0.1. Size:266K  microsemi
apt200gt60jrdl.pdf pdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GT60JRDL APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical Resonant Mode Combi IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thun- derbolt IGBT offers superior ruggedness and ultrafast switching speed. "UL Recognized" Typical Applications ISOTOP... See More ⇒

 7.1. Size:474K  apt
apt200gn60j.pdf pdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga... See More ⇒

 7.2. Size:524K  apt
apt200gn60jdq4.pdf pdf_icon

APT200GT60JR

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built... See More ⇒

Specs: APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , FGH30S130P , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , APT150GN60J .

History: APT40GF120JRDQ2 | APT40GP60B | APT35GP120JDF2 | APT35GN120BG

Keywords - APT200GT60JR transistor spec

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