TGL40N120FD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGL40N120FD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 480 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Encapsulados: TO264
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TGL40N120FD datasheet
tgl40n120fd.pdf
TGL40N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications Induction Heating, Soft switching application, UPS, Welder, Inverter Device Package Marking Remark TGL40N120FD TO-264 TGL
tgl40n120nd.pdf
TGL40N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications Induction Heating, general purpose inverter application Device Package Marking Remark TGL40N120ND TO-264 TGL40N120ND RoHS Absolute Max
Otros transistores... IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , IRG7R313U , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G .
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