TGL40N120FD Todos los transistores

 

TGL40N120FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGL40N120FD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 480 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 80 nS
   Coesⓘ - Capacitancia de salida, typ: 150 pF
   Qgⓘ - Carga total de la puerta, typ: 320 nC
   Paquete / Cubierta: TO264
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TGL40N120FD Datasheet (PDF)

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TGL40N120FD

TGL40N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationG C EApplications :Induction Heating, Soft switching application, UPS, Welder, InverterDevice Package Marking RemarkTGL40N120FD TO-264 TGL

 5.1. Size:1043K  trinnotech
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TGL40N120FD

TGL40N120NDNPT Trench IGBTFeatures: 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationG C EApplications :Induction Heating, general purpose inverter applicationDevice Package Marking RemarkTGL40N120ND TO-264 TGL40N120ND RoHSAbsolute Max

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MPBA15N65EF

 

 
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History: MPBA15N65EF

TGL40N120FD   TGL40N120FD   TGL40N120FD  

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