TGL40N120FD IGBT. Datasheet pdf. Equivalent
Type Designator: TGL40N120FD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 480 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qgⓘ - Total Gate Charge, typ: 320 nC
Package: TO264
TGL40N120FD Transistor Equivalent Substitute - IGBT Cross-Reference Search
TGL40N120FD Datasheet (PDF)
tgl40n120fd.pdf
TGL40N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationG C EApplications :Induction Heating, Soft switching application, UPS, Welder, InverterDevice Package Marking RemarkTGL40N120FD TO-264 TGL
tgl40n120nd.pdf
TGL40N120NDNPT Trench IGBTFeatures: 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationG C EApplications :Induction Heating, general purpose inverter applicationDevice Package Marking RemarkTGL40N120ND TO-264 TGL40N120ND RoHSAbsolute Max
Datasheet: IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , FGPF4633 , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G .
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