TGL40N120FD Specs and Replacement
Type Designator: TGL40N120FD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 480 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO264
TGL40N120FD Substitution - IGBT ⓘ Cross-Reference Search
TGL40N120FD datasheet
tgl40n120fd.pdf
TGL40N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications Induction Heating, Soft switching application, UPS, Welder, Inverter Device Package Marking Remark TGL40N120FD TO-264 TGL... See More ⇒
tgl40n120nd.pdf
TGL40N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications Induction Heating, general purpose inverter application Device Package Marking Remark TGL40N120ND TO-264 TGL40N120ND RoHS Absolute Max... See More ⇒
Specs: IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , IRG7R313U , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G .
History: SKM145GB063DN
Keywords - TGL40N120FD transistor spec
TGL40N120FD cross reference
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History: SKM145GB063DN
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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