TGL40N120ND IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGL40N120ND
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 455 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
trⓘ - Tiempo de subida, typ: 82 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Encapsulados: TO264
Búsqueda de reemplazo de TGL40N120ND IGBT
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TGL40N120ND datasheet
tgl40n120nd.pdf
TGL40N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications Induction Heating, general purpose inverter application Device Package Marking Remark TGL40N120ND TO-264 TGL40N120ND RoHS Absolute Max
tgl40n120fd.pdf
TGL40N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications Induction Heating, Soft switching application, UPS, Welder, Inverter Device Package Marking Remark TGL40N120FD TO-264 TGL
Otros transistores... APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , GT30G124 , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E .
History: APT40GP60J | APT40GP90B | APT150GN60J
History: APT40GP60J | APT40GP90B | APT150GN60J
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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