TGL40N120ND Todos los transistores

 

TGL40N120ND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGL40N120ND
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 455 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 82 nS
   Coesⓘ - Capacitancia de salida, typ: 150 pF
   Qgⓘ - Carga total de la puerta, typ: 340 nC
   Paquete / Cubierta: TO264
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TGL40N120ND Datasheet (PDF)

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TGL40N120ND

TGL40N120NDNPT Trench IGBTFeatures: 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationG C EApplications :Induction Heating, general purpose inverter applicationDevice Package Marking RemarkTGL40N120ND TO-264 TGL40N120ND RoHSAbsolute Max

 5.1. Size:1051K  trinnotech
 tgl40n120fd.pdf pdf_icon

TGL40N120ND

TGL40N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationG C EApplications :Induction Heating, Soft switching application, UPS, Welder, InverterDevice Package Marking RemarkTGL40N120FD TO-264 TGL

Otros transistores... APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , YGW60N65F1A1 , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E .

History: 1MBI3600U4D-170 | APT50GF120LRG

 

 
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