All IGBT. TGL40N120ND Datasheet

 

TGL40N120ND Datasheet and Replacement


   Type Designator: TGL40N120ND
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 455 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 82 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qg ⓘ - Total Gate Charge, typ: 340 nC
   Package: TO264
 

 TGL40N120ND substitution

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TGL40N120ND Datasheet (PDF)

 ..1. Size:1043K  trinnotech
 tgl40n120nd.pdf pdf_icon

TGL40N120ND

TGL40N120NDNPT Trench IGBTFeatures: 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationG C EApplications :Induction Heating, general purpose inverter applicationDevice Package Marking RemarkTGL40N120ND TO-264 TGL40N120ND RoHSAbsolute Max

 5.1. Size:1051K  trinnotech
 tgl40n120fd.pdf pdf_icon

TGL40N120ND

TGL40N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationG C EApplications :Induction Heating, Soft switching application, UPS, Welder, InverterDevice Package Marking RemarkTGL40N120FD TO-264 TGL

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - TGL40N120ND transistor datasheet

 TGL40N120ND cross reference
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