IRGP4063-E Todos los transistores

 ..1. Size:272K  international rectifier
 irgp4063-e.pdf

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

 6.1. Size:340K  international rectifier
 irgp4063dpbf.pdf

 6.2. Size:325K  international rectifier
 auirgp4063d auirgp4063d-e.pdf

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the

 6.3. Size:1357K  international rectifier
 irgp4063pbf.pdf

 6.4. Size:782K  international rectifier
 irgp4063d.pdf

PD - 97210 IRGP4063DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (ON) Trench IGBT Technology C VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for 4X rated current (ILM) P

 6.5. Size:1407K  international rectifier
 irgp4063d1.pdf

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C G IC = 60A, TC =100 C G tSC 5 s, TJ(max) = 175 C G E VCE(ON) typ. = 1.65V @ IC = 48A E C C E G G n-channel Applica ons IRGP4063D1PbF IRGP4063D1 EPbF Industrial Motor Drive G C E Inverters UPS Gate Collecto

 6.6. Size:272K  international rectifier
 irgp4063.pdf

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

 6.7. Size:337K  international rectifier
 auirgp4063d.pdf

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the