IRGP4063-E Spec and Replacement
Type Designator: IRGP4063-E
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 330 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 96 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 245 pF
Package: TO247AD
IRGP4063-E Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGP4063-E specs
irgp4063-e.pdf
PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic... See More ⇒
auirgp4063d auirgp4063d-e.pdf
AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the... See More ⇒
Specs: APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG , APT60GA60JD60 , SGH80N60UFD , IRG7PH42UD-EP , APT47GA60JD40 , AP50G60W-HF , AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E .
Keywords - IRGP4063-E transistor spec
IRGP4063-E cross reference
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