IRGP4063-E Datasheet. Specs and Replacement
Type Designator: IRGP4063-E 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 330 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 96 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 245 pF
Package: TO247AD
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IRGP4063-E Substitution
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IRGP4063-E datasheet
irgp4063-e.pdf
PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic... See More ⇒
auirgp4063d auirgp4063d-e.pdf
AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the... See More ⇒
Specs: APT25GP90BG, AOK60B60D1, APT50GS60BRDQ2G, APT50GS60SRDQ2G, IRG7PH46UD-E, IRG7PH42U-EP, APT50GN60BG, APT60GA60JD60, MBQ50T65FDSC, IRG7PH42UD-EP, APT47GA60JD40, AP50G60W-HF, AOK30B60D, APT25GN120B2DQ2G, APT25GN120BG, APT25GN120SG, IRGP4069D-E
Keywords - IRGP4063-E transistor spec
IRGP4063-E cross reference
IRGP4063-E equivalent finder
IRGP4063-E lookup
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IRGP4063-E replacement
History: IXA40PG1200DHGLB | MMG35CB120X6TC
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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