All IGBT. IRGP4063-E Datasheet

 

IRGP4063-E IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP4063-E

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 330

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.65

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 96

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 40

Maximum Collector Capacity (Cc), pF: 245

Package: TO247AD

IRGP4063-E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4063-E Datasheet (PDF)

0.1. irgp4063-e.pdf Size:272K _international_rectifier

IRGP4063-E
IRGP4063-E

PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

6.1. irgp4063d.pdf Size:782K _international_rectifier

IRGP4063-E
IRGP4063-E

PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) P

6.2. irgp4063.pdf Size:272K _international_rectifier

IRGP4063-E
IRGP4063-E

PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

 6.3. auirgp4063d.pdf Size:337K _international_rectifier

IRGP4063-E
IRGP4063-E

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the

6.4. irgp4063d1.pdf Size:1407K _international_rectifier

IRGP4063-E
IRGP4063-E

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collecto

Datasheet: APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG , APT60GA60JD60 , IRG4PH50UD , IRG7PH42UD-EP , APT47GA60JD40 , AP50G60W-HF , AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E .

 

 
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