RJH1BF6RDPQ-80 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJH1BF6RDPQ-80
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 227.2 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1100 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 55 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 44 nS
Coesⓘ - Capacitancia de salida, typ: 54 pF
Paquete / Cubierta: TO247
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RJH1BF6RDPQ-80 Datasheet (PDF)
rjh1bf6rdpq-80.pdf
Preliminary Datasheet RJH1BF6RDPQ-80 R07DS0393EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 16, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Tj = 2
rjh1bf7rdpq-80.pdf
Preliminary Datasheet RJH1BF7RDPQ-80 R07DS0394EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 16, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25
Otros transistores... AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E , IRGP4069-E , RJH60F5BDPQ-A0 , IRGP4062D-E , YGW40N65F1 , RJH1CF6RDPQ-80 , TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G .
History: IKA08N65ET6 | IXGN50N60BD3
History: IKA08N65ET6 | IXGN50N60BD3
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