All IGBT. RJH1BF6RDPQ-80 Datasheet

 

RJH1BF6RDPQ-80 Datasheet and Replacement


   Type Designator: RJH1BF6RDPQ-80
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 227.2 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1100 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 55 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 54 pF
   Package: TO247
 

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RJH1BF6RDPQ-80 Datasheet (PDF)

 ..1. Size:98K  renesas
 rjh1bf6rdpq-80.pdf pdf_icon

RJH1BF6RDPQ-80

Preliminary Datasheet RJH1BF6RDPQ-80 R07DS0393EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 16, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Tj = 2

 8.1. Size:98K  renesas
 rjh1bf7rdpq-80.pdf pdf_icon

RJH1BF6RDPQ-80

Preliminary Datasheet RJH1BF7RDPQ-80 R07DS0394EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 16, 2011Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - RJH1BF6RDPQ-80 transistor datasheet

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