NGB18N40A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGB18N40A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 115 W
|Vce|ⓘ - Tensión máxima colector-emisor: 430 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 18 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 4500 nS
Coesⓘ - Capacitancia de salida, typ: 75 pF
Paquete / Cubierta: TO263
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NGB18N40A Datasheet (PDF)
ngb18n40a.pdf
NGB18N40CLB,NGB18N40ACLBIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped18 AMPS, 400 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.0 V @include Ignition, Direct Fuel Injection, or wherever hi
ngb18n40clb.pdf
NGB18N40CLBT4Ignition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTShigh current swit
Otros transistores... IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 , STGP19NC60H , YGW40N65F1A1 , NGB8204A , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2