NGB18N40A IGBT. Datasheet pdf. Equivalent
Type Designator: NGB18N40A
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 115 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 18 V
|Ic|ⓘ - Maximum Collector Current: 18 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.9 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 4500 nS
Coesⓘ - Output Capacitance, typ: 75 pF
Package: TO263
NGB18N40A Transistor Equivalent Substitute - IGBT Cross-Reference Search
NGB18N40A Datasheet (PDF)
ngb18n40a.pdf
NGB18N40CLB,NGB18N40ACLBIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped18 AMPS, 400 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.0 V @include Ignition, Direct Fuel Injection, or wherever hi
ngb18n40clb.pdf
NGB18N40CLBT4Ignition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTShigh current swit
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