All IGBT. NGB18N40A Datasheet

 

NGB18N40A Datasheet and Replacement


   Type Designator: NGB18N40A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 18 V
   |Ic|ⓘ - Maximum Collector Current: 18 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 4500 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Package: TO263
      - IGBT Cross-Reference

 

NGB18N40A Datasheet (PDF)

 ..1. Size:125K  onsemi
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NGB18N40A

NGB18N40CLB,NGB18N40ACLBIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped18 AMPS, 400 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.0 V @include Ignition, Direct Fuel Injection, or wherever hi

 6.1. Size:87K  1
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NGB18N40A

NGB18N40CLBT4Ignition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTShigh current swit

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: BSM35GD120DLC_E3224 | CM25MD-24H | RJH60D2DPP-E0 | 2MBI900VXA-120P-50 | BT15T60A8F | MIXA100PM650TMI | IQGB300N120I4

Keywords - NGB18N40A transistor datasheet

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