NGB18N40A Specs and Replacement
Type Designator: NGB18N40A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 115 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 18 V
|Ic| ⓘ - Maximum Collector Current: 18 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 4500 nS
Coesⓘ - Output Capacitance, typ: 75 pF
Package: TO263
NGB18N40A Substitution - IGBT ⓘ Cross-Reference Search
NGB18N40A datasheet
ngb18n40a.pdf
NGB18N40CLB, NGB18N40ACLB Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK http //onsemi.com This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped 18 AMPS, 400 VOLTS protection for use in inductive coil drivers applications. Primary uses VCE(on) 3 2.0 V @ include Ignition, Direct Fuel Injection, or wherever hi... See More ⇒
ngb18n40clb.pdf
NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high current swit... See More ⇒
Specs: IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 , STGP19NC60H , AOK40B65H2AL , NGB8204A , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF .
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