All IGBT. NGB18N40A Datasheet

 

NGB18N40A Datasheet and Replacement


   Type Designator: NGB18N40A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 115 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 18 V
   |Ic| ⓘ - Maximum Collector Current: 18 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 4500 nS
   Coesⓘ - Output Capacitance, typ: 75 pF
   Package: TO263
 

 NGB18N40A substitution

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NGB18N40A Datasheet (PDF)

 ..1. Size:125K  onsemi
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NGB18N40A

NGB18N40CLB,NGB18N40ACLBIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKhttp://onsemi.comThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clamped18 AMPS, 400 VOLTSprotection for use in inductive coil drivers applications. Primary usesVCE(on) 3 2.0 V @include Ignition, Direct Fuel Injection, or wherever hi

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NGB18N40A

NGB18N40CLBT4Ignition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTShigh current swit

Datasheet: IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 , STGP19NC60H , IRG4PC50UD , NGB8204A , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF .

History: MMG25H120X6TN

Keywords - NGB18N40A transistor datasheet

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