AOD5B60D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOD5B60D  📄📄 

Tipo de transistor: IGBT + Diode

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 54.4 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6(typ) V

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 34 pF

Qgⓘ - Carga total de la puerta, typ: 9.4 nC

Encapsulados: TO252

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AOD5B60D datasheet

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AOD5B60D

AOD5B60D TM 600V, 5A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 5A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance to o

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AOD5B60D

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 aod5b65mq1e.pdf pdf_icon

AOD5B60D

AOD5B65MQ1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 5A C) IGBT copacked with very fast and soft antiparallel VCE(sat) (TJ=25 2.15V C) diode Very good EMI performance with lower turn-on switching losses

 8.3. Size:1255K  aosemi
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AOD5B60D

AOD5B65M1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllability IC (TC=100 C) 5A Low VCE(sat) for low conduction losses VCE(sat) (TJ=25 C) 2.15V Soft switching performance and low EMI High electrostatic perfor

MOSTRAR MÁS

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