AOD5B60D Datasheet. Specs and Replacement

Type Designator: AOD5B60D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 54.4 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 34 pF

Package: TO252

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AOD5B60D datasheet

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AOD5B60D

AOD5B60D TM 600V, 5A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 5A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance to o... See More ⇒

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AOD5B60D

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AOD5B60D

AOD5B65MQ1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 5A C) IGBT copacked with very fast and soft antiparallel VCE(sat) (TJ=25 2.15V C) diode Very good EMI performance with lower turn-on switching losses ... See More ⇒

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AOD5B60D

AOD5B65M1E TM 650V, 5A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Very fast and soft recovery freewheeling diode 650V High efficient turn-on di/dt controllability IC (TC=100 C) 5A Low VCE(sat) for low conduction losses VCE(sat) (TJ=25 C) 2.15V Soft switching performance and low EMI High electrostatic perfor... See More ⇒

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Specs: IRG4BC30UDPBF, IRGSL6B60K, STGFW30NC60V, AOB5B60D, AP20GT60ASP-HF, IRG7RC10FD, IRG4BC20FD-S, TGD30N40P, XNF15N60T, AOTF15B60D, AOTF10B60D, IRG7IC30FD, RJP60V0DPM, NTE3301, IRG7RC07SD, CPV363M4UPBF, CPV363M4KPBF

Keywords - AOD5B60D transistor spec

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