AOTF15B60D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOTF15B60D  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 50 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 19 nS

Coesⓘ - Capacitancia de salida, typ: 97 pF

Encapsulados: TO220F

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AOTF15B60D datasheet

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AOTF15B60D

AOTF15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

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AOTF15B60D

AOTF15B60D2 TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance

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 aotf15b65m1.pdf pdf_icon

AOTF15B60D

AOTF15B65M1 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

 6.2. Size:572K  aosemi
 aotf15b65m3.pdf pdf_icon

AOTF15B60D

AOTF15B65M3 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V Breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.95V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

MOSTRAR MÁS

Otros transistores... IRGSL6B60K, STGFW30NC60V, AOB5B60D, AP20GT60ASP-HF, IRG7RC10FD, IRG4BC20FD-S, TGD30N40P, AOD5B60D, IRG4PF50W, AOTF10B60D, IRG7IC30FD, RJP60V0DPM, NTE3301, IRG7RC07SD, CPV363M4UPBF, CPV363M4KPBF, AP20GT60ASI-HF