AOTF15B60D Todos los transistores

 

AOTF15B60D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF15B60D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 50 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 19 nS
   Coesⓘ - Capacitancia de salida, typ: 97 pF
   Paquete / Cubierta: TO220F
 

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Principales características: AOTF15B60D

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AOTF15B60D

AOTF15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

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AOTF15B60D

AOTF15B60D2 TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance

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AOTF15B60D

AOTF15B65M1 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

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AOTF15B60D

AOTF15B65M3 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V Breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.95V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

MOSTRAR MÁS

Otros transistores... IRGSL6B60K , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , IRG4PF50W , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , NTE3301 , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF .

 

 
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