All IGBT. AOTF15B60D Datasheet

 

AOTF15B60D Datasheet and Replacement


   Type Designator: AOTF15B60D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 50 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 19 nS
   Coesⓘ - Output Capacitance, typ: 97 pF
   Package: TO220F
      - IGBT Cross-Reference

 

AOTF15B60D Datasheet (PDF)

 ..1. Size:733K  aosemi
aotf15b60d.pdf pdf_icon

AOTF15B60D

AOTF15B60DTM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

 0.1. Size:721K  aosemi
aotf15b60d2.pdf pdf_icon

AOTF15B60D

AOTF15B60D2TM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 6.1. Size:558K  aosemi
aotf15b65m1.pdf pdf_icon

AOTF15B60D

AOTF15B65M1TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

 6.2. Size:572K  aosemi
aotf15b65m3.pdf pdf_icon

AOTF15B60D

AOTF15B65M3TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT(IGBT) technology 650V 650V Breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci

Datasheet: IRGSL6B60K , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , HGTG30N60A4 , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , NTE3301 , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF .

History: SGT20T60SD1PN | IXST35N120B | OST40N65HMF | MSG100D350FHS | 1MBI600PX-120 | MSG20T65HPT1 | MSG40T120FQC

Keywords - AOTF15B60D transistor datasheet

 AOTF15B60D cross reference
 AOTF15B60D equivalent finder
 AOTF15B60D lookup
 AOTF15B60D substitution
 AOTF15B60D replacement

 

 
Back to Top

 


 
.