IRG7IC30FD Todos los transistores

 ..1. Size:298K  international rectifier
 irg7ic30fd.pdf

IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE(on) VCES = 600V Zero VCE(on) temperature coefficient 3 s Short Circuit Capability INOM = 24A Square RBSOA VCE(on) typ. = 1.60V Benefits G Benchmark Efficiency for Motor Control Applications E tSC 3 s, TJ(max) = 150 C Rugged Transient Performance

 8.1. Size:282K  international rectifier
 irg7ic28u.pdf

PD - 97562 IRG7IC28UPbF PDP TRENCH IGBT Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l

 9.1. Size:287K  international rectifier
 irg7ia19u.pdf

PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lea

 9.2. Size:203K  international rectifier
 irg7i313u.pdf

PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.35 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L

 9.3. Size:171K  international rectifier
 irg7ia13u.pdf

PD - 97636A IRG7IA13UPbF PDP TRENCH IGBT Key Parameters Features VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25 C circuits in PDP applications 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L

 9.4. Size:297K  international rectifier
 irg7i319u.pdf

PD -96273 PDP TRENCH IGBT IRG7I319UPbF Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25 C 170 A circuits in PDP applications TJ max 150 C l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability C l