All IGBT. IRG7IC30FD Datasheet

 

IRG7IC30FD Datasheet and Replacement


   Type Designator: IRG7IC30FD
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 42 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Package: TO220F
      - IGBT Cross-Reference

 

IRG7IC30FD Datasheet (PDF)

 ..1. Size:298K  international rectifier
 irg7ic30fd.pdf pdf_icon

IRG7IC30FD

IRG7IC30FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE(on)VCES = 600V Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityINOM = 24A Square RBSOAVCE(on) typ. = 1.60VBenefits G Benchmark Efficiency for Motor ControlApplicationsE tSC 3s, TJ(max) = 150C Rugged Transient Performance

 8.1. Size:282K  international rectifier
 irg7ic28u.pdf pdf_icon

IRG7IC30FD

PD - 97562IRG7IC28UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

 9.1. Size:287K  international rectifier
 irg7ia19u.pdf pdf_icon

IRG7IC30FD

PD-96356PDP TRENCH IGBTIRG7IA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea

 9.2. Size:203K  international rectifier
 irg7i313u.pdf pdf_icon

IRG7IC30FD

PD - 97411IRG7I313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.35 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

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History: IKW50N65EH5 | IXGT40N60C2D1 | 1MB08D-120 | IXGH64N60A3 | NGTB30N120IHS | SG12N06DP | DM2G75SH6A

Keywords - IRG7IC30FD transistor datasheet

 IRG7IC30FD cross reference
 IRG7IC30FD equivalent finder
 IRG7IC30FD lookup
 IRG7IC30FD substitution
 IRG7IC30FD replacement

 

 
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